相关论文: Detection of the relaxation rates of an interactin…

We investigate experimentally the quantum coherence of an electronic two-level system in a double quantum dot under continuous charge detection. The charge-state of the two-level system is monitored by a capacitively coupled single quantum…

We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off…

We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…

The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed…

Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…

We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a…

We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive…

Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum…

We performed measurements on a quantum dot and a capacitively coupled quantum point contact by using the sharp metallic tip of a low-temperature scanning force microscope as a scanned gate. The quantum point contact served as a detector for…

Charge sensing in quantum-dot structures is studied by an exactly solvable reduced model and numerical density-matrix renormalization group methods. Charge sensing is characterized by the repeated cycling of the occupation of…

We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which…

In this paper we study the low temperature kinetics of the electrons in the system composed of a quantum dot connected to two leads by solving the equation of motion. The decoherence and the relaxation of the system caused by the gate…

We analyze the dynamics of a single-level quantum dot with Coulomb interaction, weakly tunnel coupled to an electronic reservoir, after it has been brought out of equilibrium, e.g. by a step-pulse potential. We investigate the exponential…

A pulsed-gate technique with charge sensing is used to measure the singlet-triplet relaxation time for nearly-degenerate spin states in a two-electron double quantum dot. Transitions from the (1,1) charge occupancy state to the (0,2) state,…

We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and…

The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double…

We theoretically investigate the backaction of a sensor quantum dot with strong local Coulomb repulsion on the transient dynamics of a qubit that is probed capacitively. We show that the measurement backaction induced by the noise of…

We derive an analytical expression for the backaction dephasing rate, which characterizes the disturbance induced by coupling with an environment containing a quantum dot detector (QDD). In this letter, we show that charge noise induces…

We propose a relaxation time approximation for the description of the dynamics of strongly excited fermion systems. Our approach is based on time-dependent density functional theory at the level of the local density approximation. This…

We investigate the effect of the charge state measurement of the Kondo singlet for a quantum dot transistor via a capacitively coupled quantum point contact detector. By employing the variational ansatz for the singlet ground state of the…