相关论文: Switching Properties in Magnetic Tunnel Junctions …

Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…

Superparamagnetic tunnel junctions (SMTJs) are promising sources for the randomness required by some compact and energy-efficient computing schemes. Coupling SMTJs gives rise to collective behavior that could be useful for cognitive…

Magnetic Tunnel Junction (MTJ) based Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is poised to replace embedded Flash for advanced applications such as automotive microcontroller units. To achieve deeper technological…

Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…

Brain-inspired computing architectures attempt to mimic the computations performed in the neurons and the synapses in the human brain in order to achieve its efficiency in learning and cognitive tasks. In this work, we demonstrate the…

We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…

By integrating the local voltage-controlled magnetic anisotropy (VCMA) effect, Dzyaloshinskii-Moriya interaction (DMI) effect, and spin-orbit torque (SOT) effect, we propose a novel device structure for field-free magnetic tunnel junction…

We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switching current density of 2-3 x 10 MA/cm2. The switching data…

Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal…

One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that…

The impact of 400 keV $Ar^+$ ion irradiation on the magnetic and electrical properties of in-plane magnetized magnetic tunnel junction (MTJ) stacks was investigated by ferromagnetic resonance, vibrating sample magnetometry and…

Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device…

The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…

RT\textsubscript{12} materials continue to attract attention due to their potential use as ``rare-earth-lean'' permanent magnets, but converting their promising intrinsic properties into practical high performance remains an elusive goal.…

The conventional computer architecture has been facing challenges answering the ever-increasing demands from emerging applications, such as AI, for energy-efficient computation and memory hardware systems. Computational Random Access Memory…

Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…

Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However,…

In our JunPy package, we have combined the first-principles calculated self-consistent Hamiltonian with divide-and-conquer technique to successfully determine the magnetic anisotropy (MA) in an Fe/MgO/Fe magnetic tunnel junction (MTJ). We…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…