相关论文: Exploring Ultra Low-Power on-Chip Clocking Using F…
We report the first electrical manipulation and detection of the mesoscopic intrinsic spin-Hall effect (ISHE) in semiconductors through non-local electrical measurement in nano-scale H-shaped structures built on high mobility HgTe/HgCdTe…
Ising spin model is considered as an efficient computing method to solve combinatorial optimization problems based on its natural tendency of convergence towards low energy state. The underlying basic functions facilitating the Ising model…
Recent years have witnessed growing interest in the field of brain-inspired computing based on neural-network architectures. In order to translate the related algorithmic models into powerful, yet energy-efficient cognitive-computing…
In this paper, we develop a 6-input fracturable non-volatile Clockless LUT (C-LUT) using spin Hall effect (SHE)-based Magnetic Tunnel Junctions (MTJs) and provide a detailed comparison between the SHE-MTJ-based C-LUT and Spin Transfer…
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…
The spin Hall effect (SHE) of light in layered nanostructures is investigated theoretically in this paper. A general propagation model describing the spin-dependent transverse splitting in the SHE of light is established from the viewpoint…
Exploration of spin-currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates has been of great interest for potential spintronics applications. Due to the inherently weak spin-orbit…
Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. However, the switching requires an assisted in-plane magnetic…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetisation switching in advanced spintronic devices. Over the past two decades, researchers have primarily focused on enhancing spin…
The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic…
Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is…
We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation,…
The phenomenon of Spin Hall Effect (SHE) generates a pure spin current transverse to an applied current in materials with strong spin-orbit coupling, although not detectable through conventional electrical measurement. An intuitive Hall…
A clock synchronizing circuit for repeaterless low swing interconnects is presented in this paper. The circuit uses a delay locked loop (DLL) to generate multiple phases of the clock, of which the one closest to the center of the eye is…
A semi-classical description of the intrinsic spin-Hall effect (SHE) is presented which is relevant for a wide class of systems. A heuristic model for the SHE is developed, starting with a fully quantum mechanical treatment, from which we…
The photonic Spin Hall Effect (SHE) causes a polarization-dependent transverse shift of light at an interface. There is a significant research interest in controlling and enhancing the photonic SHE. In this paper, we theoretically…
Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications such as oscillator-based neuromorphic computing and Ising Machines. However, their…
A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM)…
The spin Hall effect (SHE) is normally discussed in terms of a spin current, which is ill-defined in strongly spin-orbit-coupled systems because of spin non-conservation. In this work we propose an alternative view of SHE phenomena by…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…