相关论文: Exploring Ultra Low-Power on-Chip Clocking Using F…

The Spin Hall Effect (SHE) is a promising way for transforming charge currents into spin currents in spintronic devices. Large values of the Spin Hall Angle, the characteristic parameter of the yield of this transformation, have been…

Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can…

Spin-torque nano-oscillators (STNO) are microwave auto-oscillators based on magnetic resonances having a nonlinear response with the oscillating amplitude, which provides them with a large frequency tunability including the possibility of…

Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque…

Over the past decade Spiking Neural Networks (SNN) have emerged as one of the popular architectures to emulate the brain. In SNN, information is temporally encoded and communication between neurons is accomplished by means of spikes. In…

Spin-orbit torque can drive auto-oscillations of propagating spin wave (PSW) modes in nano-constriction spin Hall nano-oscillators (SHNOs). These modes allow both long-range coupling and the potential of controlling its phase -- critical…

The spin Hall effect is a celebrated phenomenon in spintronics and magnetism that has found numerous applications in digital electronics (memory and logic), but very few in analog electronics. Practically, the only analog application in…

Synchronization of coupled oscillators is a fundamental phenomenon that has been observed in many natural and engineered systems, ranging from biological cells to electronic circuits. In recent years, spin torque nano-oscillators (STNOs)…

Electronic properties like current flow are generally independent of the electron's spin angular momentum, an internal degree of freedom present in quantum particles. The spin Hall effects (SHEs), first proposed 40 years ago, are an unusual…

Atomically-thin materials based on transition metal dichalcogenides and graphene offer a promising avenue for unlocking the mechanisms underlying the spin Hall effect (SHE) in heterointerfaces. Here, we develop a microscopic theory of the…

We propose a spin Hall effect (SHE) enhancement mechanism due to Kramers-Weyl point (KWP) alignment in chiral topological semimetals with high Chern numbers (CNs). Through model Hamiltonian calculations, we identify enhancements in the…

The spin Hall effect (SHE) converts charge current to pure spin currents in orthogonal directions in materials that have significant spin-orbit coupling.The efficiency of the conversion is described by the spin Hall Angle (SHA). The SHA can…

Spin Hall effect (SHE) in a 2D-Rashba system has been treated in the spin-dependent precession [J. Sinova et al., Phys. Rev. Letts. 92, 126603 (2004).] and the time-space gauge [T. Fujita et al., New J. Phys. 12, 013016 (2010).] approaches,…

Spin-torque nano-oscillators (STNOs) are a type of nanoscale microwave auto-oscillators utilizing spin-torque to generate magnetodynamics with great promise for applications in microwaves, magnetic memory, and neuromorphic computing. Here,…

Nanomagnetic logic transmits information along a path of nanomagnets. The basic mechanism to drive such a transmission, known as clocking, can be achieved by exploiting the spin-Hall effect, as recently observed in experiments on…

In this work, we propose FUSE, a novel GPU cache system that integrates spin-transfer torque magnetic random-access memory (STT-MRAM) into the on-chip L1D cache. FUSE can minimize the number of outgoing memory accesses over the…

Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…

Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the…

Surface hopping (SH) methods are typically employed to simulate ultrafast nonadiabatic processes, but long timescales often remain beyond their reach. To address this, accelerated SH scheme mitigate this limitation by scaling the driving…

The inherent stochasticity in many nano-scale devices makes them prospective candidates for low-power computations. Such devices have been demonstrated to exhibit probabilistic switching between two stable states to achieve stochastic…