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相关论文: Effect of anisotropic spin absorption on the Hanle…

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The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin…

介观与纳米尺度物理 · 物理学 2015-05-27 Y. Fukuma , L. Wang , H. Idzuchi , S. Takahashi , S. Maekawa , Y. Otani

We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport,…

介观与纳米尺度物理 · 物理学 2015-10-12 Estitxu Villamor , Luis E. Hueso , Fèlix Casanova

The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a…

We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g. fringe fields, etc.), and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3…

介观与纳米尺度物理 · 物理学 2017-03-31 Walid Amamou , Zhisheng Lin , Jeremiah van Baren , Serol Turkyilmaz , Jing Shi , Roland K. Kawakami

We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties…

材料科学 · 物理学 2018-12-05 G. Zahnd , Laurent Vila , V. Pham , M Cosset-Cheneau , W Lim , A Brenac , P Laczkowski , A Marty , J Attané

We study theoretically the spin transport in a device in which the active layer is an organic film with numerous deep in-gap levels serving as traps. A carrier, diffusing between magnetized injector and detector, spends a considerable…

介观与纳米尺度物理 · 物理学 2014-12-17 R. C. Roundy , M. E. Raikh

Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…

Injection, transmission, and detection of spins in a conducting channel are the basic ingredients of spintronic devices. Long spin lifetimes during transit are an important ingredient in realizing this technology. An attractive platform for…

介观与纳米尺度物理 · 物理学 2014-07-02 Evan Sosenko , Huazhou Wei , Vivek Aji

Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si$_{\rm 0.1}$Ge$_{\rm 0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n \sim$ 5.0 $\times$ 10$^{18}$ cm$^{-3}$). Clear…

介观与纳米尺度物理 · 物理学 2018-04-26 T. Naito , M. Yamada , M. Tsukahara , S. Yamada , K. Sawano , K. Hamaya

Motivated by the recently discovered magnonic Hanle effect in an insulating antiferromagnet [Wimmer et al., Phys. Rev. Lett. 125, 247204 (2020)], we develop a spin transport theory based on low-energy waves of antiferromagnetic N\'eel…

介观与纳米尺度物理 · 物理学 2024-03-07 Eric Kleinherbers , Yaroslav Tserkovnyak

A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germanium devices in a longitudinal magnetic field. The…

材料科学 · 物理学 2014-03-07 Pengke Li , Jing Li , Lan Qing , Hanan Dery , Ian Appelbaum

We generalize the diffusive model for spin injection and detection in nonlocal spin structures to account for spin precession under an applied magnetic field in an anisotropic medium, for which the spin lifetime is not unique and depends on…

介观与纳米尺度物理 · 物理学 2018-04-26 B. Raes , A. W. Cummings , F. Bonell , M. V. Costache , J. F. Sierra , S. Roche , S. O. Valenzuela

An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or…

介观与纳米尺度物理 · 物理学 2018-10-24 Walid Amamou , Gordon Stecklein , Steven J. Koester , Paul A. Crowell , Roland K. Kawakami

The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al$_{0.3}$Ga$_{0.7}$As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for…

We study spin-transport in bilayer-graphene (BLG), spin-orbit coupled to a tungsten di sulfide (WS$_2$) substrate, and measure a record spin lifetime anisotropy ~40-70, i.e. ratio between the out-of-plane $\tau_{\perp}$ and in-plane spin…

介观与纳米尺度物理 · 物理学 2019-10-23 Siddhartha Omar , Bettadahalli Nandishaiah Madhushankar , Bart Jan van Wees

Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing…

介观与纳米尺度物理 · 物理学 2012-07-02 Hiroshi Idzuchi , Yasuhiro Fukuma , YoshiChika Otani

We propose a possible experimental setup for nonreciprocal electron transport in a lateral spin valve due to noncoplanar distribution of magnetic moment (and field) in the system. Some metals (Al, Cu) and semiconductors (GaAs, InSb etc.)…

介观与纳米尺度物理 · 物理学 2019-11-28 D. A. Tatarskiy , E. A. Karashtin

We observe anisotropic Hanle lineshape with unequal in-plane and out-of-plane non-local signals for spin precession measurements carried out on lateral metallic spin valves with transparent interfaces. The conventional interpretation for…

介观与纳米尺度物理 · 物理学 2017-02-09 K. S. Das , F. K. Dejene , B. J. van Wees , I. J. Vera-Marun

Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times…

介观与纳米尺度物理 · 物理学 2015-05-13 M. Popinciuc , C. Józsa , P. J. Zomer , N. Tombros , A. Veligura , H. T. Jonkman , B. J. van Wees

A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…

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