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相关论文: Electronics with correlated oxides: SrVO$_3$/SrTiO…

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We use density functional theory plus dynamical mean-field theory to demonstrate the emergence of a metallic layer at the interface between the two Mott insulators LaTiO$_3$ and LaVO$_3$. The metallic layer is due to charge transfer across…

强关联电子 · 物理学 2019-09-11 Sophie Beck , Claude Ederer

The Mott-insulating distorted perovskite SmTiO$_3$, doped with a single SrO layer in a quantum-well architecture is studied by the combination of density functional theory with dynamical mean-field theory. A rich correlated electronic…

强关联电子 · 物理学 2017-05-10 Frank Lechermann

We report structural, magnetization, electrical resistivity and nuclear- and electron spin resonance data of the complex transition metal oxide In_2VO_5 in which structurally well-defined V-O chains are realized. An itinerant character of…

强关联电子 · 物理学 2009-11-13 A. Moller , T. Taetz , N. Hollmann , J. A. Mydosh , V. Kataev , M. Yehia , E. Vavilova , B. Buchner

The two-dimensional layered perovskite Sr2IrO4 was proposed to be a spin-orbit Mott insulator, where the effect of Hubbard interaction is amplified on a narrow J_{eff} = 1/2 band due to strong spin-orbit coupling. On the other hand, the…

强关联电子 · 物理学 2012-03-08 Jean-Michel Carter , V. Vijay Shankar , M. Ahsan Zeb , Hae-Young Kee

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…

The last few decades has seen the rapid growth of interest in the bulk perovskite-type transition metal oxides SrVO$_3$ and SrTiO$_3$. The electronic configuration of these perovskites differs by one electron associated to the transition…

强关联电子 · 物理学 2023-09-04 A. D. N. James , M. Aichhorn , J. Laverock

Interfacial superconductivity has manifested itself in various types of heterostructures: band insulator-band insulator, band insulator-Mott insulator, and Mott insulator-metal. We report the observation of high-temperature…

超导电性 · 物理学 2022-01-25 Lele Ju , Tianshuang Ren , Zhu Li , Zhongran Liu , Chuanyu Shi , Yuan Liu , Siyuan Hong , Jie Wu , He Tian , Yi Zhou , Yanwu Xie

We present a theoretical study of a model heterostructure for a Mott-insulator sandwiched between two band insulators, such as SrTiO3/LaTiO3. Particular emphasis is given on the interplay between magnetism and inhomogeneous charge…

强关联电子 · 物理学 2013-02-19 Suguru Ueda , Norio Kawakami , Manfred Sigrist

$V_2O_3$ has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we…

Spin-orbit torques (SOTs) from transition metal oxides (TMOs) in conjunction with magnetic materials have recently attracted tremendous attention for realizing high-efficient spintronic devices. SrRuO3 is a promising candidate among TMOs…

材料科学 · 物理学 2024-03-04 Sheng Li , Bin Lao , Zengxing Lu , Xuan Zheng , Kenan Zhao , Liguang Gong , Tao Tang , Keyi Wu , Run-Wei Li , Zhiming Wang

The structural, magnetic, and electronic properties of (STO)$_4$/(YTO)$_2$ superlattice consisting of Mott insulator YTiO$_3$ (YTO) and band insulator SrTiO$_3$ (STO) under strain are investigated by the density-functional-theory plus…

介观与纳米尺度物理 · 物理学 2017-10-10 Xue-Jing Zhang , Peng Chen , Bang-Gui Liu

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

强关联电子 · 物理学 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

Oxide heterostructures and superlattices have attracted a great deal of attention in recent years owing to the rich exotic properties encountered at their interfaces. We focus on the potential of tunable correlated oxides by investigating…

强关联电子 · 物理学 2019-03-15 J. Laverock , M. Gu , V. Jovic , J. W. Lu , S. A. Wolf , R. M. Qiao , W. Yang , K. E. Smith

Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of…

SrRuO$_3$ (SRO) films are known to exhibit insulating behavior as their thickness approaches four unit cells. We employ electron energy$-$loss (EEL) spectroscopy to probe the spatially resolved electronic structures of both insulating and…

强关联电子 · 物理学 2017-12-15 Subeen Pang , Yoonkoo Kim , Yeong Jae Shin , Byungmin Sohn , SeungYong Lee , Tae Won Noh , Miyoung Kim

The insulator to metal transition in LaTiO_3 induced by La substitution via Sr is studied within multi-band exact diagonalization dynamical mean field theory at finite temperatures. It is shown that weak hole doping triggers a large…

强关联电子 · 物理学 2009-11-13 A. Liebsch

Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are…

Layered ruthenates are a unique class of systems which manifests a variety of electronic and magnetic features emerged from competing energy scales. At the heart of such features lies the multi-orbital physics, especially, the…

强关联电子 · 物理学 2022-11-08 Minjae Kim , Chang-Jong Kang , Jae-Ho Han , Kyoo Kim , Bongjae Kim

We investigate the effect of spatial doping of the Mott insulator LaVO$_3$ by inserting a few layers of the correlated metal SrVO$_3$ in multilayer geometries. Using density functional theory in combination with dynamical mean-field theory,…

强关联电子 · 物理学 2022-12-22 Sophie Beck , Claude Ederer

We have analyzed spectral weight changes in the conduction and the valence band across insulator to metal transition (IMT) in the VO2 thin film using X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (PES). Through…

强关联电子 · 物理学 2019-07-31 S. S. Majid , K. Gautam , A. Ahad , F. Rahman , R. J. Choudhary , Frank M. F. De Groot , D. K. Shukla