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相关论文: A Cache Energy Optimization Technique for STT-RAM …

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Spin-Transfer Torque RAMs (STTRAMs) have been shown to offer much promise for implementing emerging cache architectures. This paper studies the viability of STTRAM caches for mobile workloads from the perspective of energy and latency.…

分布式、并行与集群计算 · 计算机科学 2019-08-14 Kyle Kuan , Tosiron Adegbija

An effective way to improve energy efficiency is to throttle hardware resources to meet a certain performance target, specified as a QoS constraint, associated with all applications running on a multicore system. Prior art has proposed…

硬件体系结构 · 计算机科学 2019-11-14 Mehrzad Nejat , Madhavan Manivannan , Miquel Pericas , Per Stenstrom

Cache plays a critical role in reducing the performance gap between CPU and main memory. A modern multi-core CPU generally employs a multi-level hierarchy of caches, through which the most recently and frequently used data are maintained in…

硬件体系结构 · 计算机科学 2021-06-01 Rui Wang , Chundong Wang , Chongnan Ye

Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations…

硬件体系结构 · 计算机科学 2022-06-09 Carlos Escuin , Pablo Ibañez , Teresa Monreal , Jose M. Llaberia , Victor Viñals

DRAM is the prevalent main memory technology, but its long access latency can limit the performance of many workloads. Although prior works provide DRAM designs that reduce DRAM access latency, their reduced storage capacities hinder the…

硬件体系结构 · 计算机科学 2020-05-27 Haocong Luo , Taha Shahroodi , Hasan Hassan , Minesh Patel , Abdullah Giray Yaglikci , Lois Orosa , Jisung Park , Onur Mutlu

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

硬件体系结构 · 计算机科学 2026-01-05 Elham Cheshmikhani , Hamed Farbeh , Hossein Asadi

The increased memory demands of workloads is putting high pressure on Last Level Caches (LLCs). Unfortunately, there is limited opportunity to increase the capacity of LLCs due to the area and power requirements of the underlying SRAM…

硬件体系结构 · 计算机科学 2021-12-21 Apostolos Kokolis , Namrata Mantri , Shrikanth Ganapathy , Josep Torrellas , John Kalamatianos

Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…

硬件体系结构 · 计算机科学 2025-12-01 Elham Cheshmikhani , Hamed Farbeh , Hossein Asad

Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…

硬件体系结构 · 计算机科学 2022-08-17 Saeed Seyedfaraji , Javad Talafy Daryani , Mohamed M. Sabry Aly , Semeen Rehman

With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a few factors of DRAM. Nevertheless, the latency-sensitive nature…

The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low operation energy. To date, high-density (HD) SRAM has been the conventional…

新兴技术 · 计算机科学 2025-03-12 Faaiq Waqar , Jungyoun Kwak , Junmo Lee , Minji Shon , Mohammadhosein Gholamrezaei , Kevin Skadron , Shimeng Yu

Last-Level Cache (LLC) represents the bulk of a modern CPU processor's transistor budget and is essential for application performance as LLC enables fast access to data in contrast to much slower main memory. However, applications with…

硬件体系结构 · 计算机科学 2020-06-16 Priyank Faldu

The number of battery-powered devices is rapidly increasing due to the widespread use of IoT-enabled nodes in various fields. Energy harvesters, which help to power embedded devices, are a feasible alternative to replacing battery-powered…

硬件体系结构 · 计算机科学 2023-05-18 SatyaJaswanth Badri , Mukesh Saini , Neeraj Goel

Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance…

硬件体系结构 · 计算机科学 2023-08-07 Sourjya Roy , Cheng Wang , Anand Raghunathan

We propose overcoming the memory capacity limitation of GPUs with high-capacity Storage-Class Memory (SCM) and DRAM cache. By significantly increasing the memory capacity with SCM, the GPU can capture a larger fraction of the memory…

硬件体系结构 · 计算机科学 2024-03-15 Jeongmin Hong , Sungjun Cho , Geonwoo Park , Wonhyuk Yang , Young-Ho Gong , Gwangsun Kim

There has been a significant increase in leakage energy dissipation of CMOS circuits with each technology generation. Further, due to their large size, last level caches (LLCs) spend a large fraction of their energy in the form of leakage…

硬件体系结构 · 计算机科学 2013-09-24 Sparsh Mittal

Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data…

其他计算机科学 · 计算机科学 2016-06-20 Zoha Pajouhi , Xuanyao Fong , Anand Raghunathan , Kaushik Roy

SRAM-based cache memory faces several scalability limitations in deep nanoscale technologies, e.g., high leakage current, low cell stability, and low density. Emerging Non-Volatile Memory (NVM) technologies have received lots of attention…

新兴技术 · 计算机科学 2025-12-02 Elham Cheshmikhani , Fateme Shokouhinia , Hamed Farbeh

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…

硬件体系结构 · 计算机科学 2013-09-17 Sparsh Mittal

To mitigate the ever-worsening Power Wall problem, more and more applications need to expand their power supply to the wide-voltage range including the near-threshold region. However, the read delay distribution of the SRAM cells under the…

硬件体系结构 · 计算机科学 2023-06-16 Shan Shen , Tianxiang Shao , Xiaojing Shang , Yichen Guo , Ming Ling , Jun Yang , Longxing Shi