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相关论文: Klein tunneling and cone transport in AA-stacked b…

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We study the charge carriers transport in an AA-stacked bilayer graphene modulated by a lateral one-dimensional multibarrier structure. We investigate the band structures of our system, that is made up of two shifted Dirac cones, for finite…

介观与纳米尺度物理 · 物理学 2015-09-16 Ilham Redouani , Ahmed Jellal

Trilayer graphene {(TLG)} consists of three layers of graphene arranged in a particular stacking order. In the case of ABC-ABA-ABC stacking, the layers are arranged in an A-B-C sequence, followed by an A-B-A sequence, and again an A-B-C…

介观与纳米尺度物理 · 物理学 2024-05-28 Abderrahim El Mouhafid , Mouhamadou Hassane Saley , Ahmed Jellal

We study the electronic transport through np and npn junctions for AAA-stacked trilayer graphene. Two kinds of gates are considered where the first is a single gate and the second is a double gate. After obtaining the solutions for the…

介观与纳米尺度物理 · 物理学 2016-10-31 Ilham Redouani , Ahmed Jellal , Abdelhadi Bahaoui , Hocine Bahlouli

We demonstrate that AA-stacked bilayer graphene (AA-BLG) encapsulated by dielectric materials can possess an energy gap due to the induced mass term. Using the four-band continuum model, we evaluate transmission and reflection probabilities…

介观与纳米尺度物理 · 物理学 2019-06-17 Hasan M. Abdullah , Mohammed Al Ezzi , H. Bahlouli

We theoretically investigate the electron tunneling in dual-gated bilayer graphene-based $n/p$ junctions. It is shown that a band gap is introduced by tuning the gate voltage, which modifies the pseudospin polarization and breaks anti-Klein…

介观与纳米尺度物理 · 物理学 2026-05-19 Yupeng Huang , W. Zeng

Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1{\deg}. At small bias voltages, the tunneling occurs with…

The important experimental advances in graphene fabrication and its peculiar transport properties motivated researchers to utilize graphene as a potential basis for the next generation of fast and smart electronic devices. In this article,…

介观与纳米尺度物理 · 物理学 2018-05-29 Hasan M. Abdullah , H. Bahlouli

The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use in future electronics. It is hence necessary to analyze quantum transport in such nanostructures. Material…

介观与纳米尺度物理 · 物理学 2022-11-01 Angelika Knothe , Leonid I. Glazman , Vladimir I. Fal'ko

The conductance through single-layer graphene (SLG) and AA/AB-stacked bilayer graphene (BLG) junctions is obtained by taking into account band gap and bias voltage terms. First, we consider gapped SLG, while in between, they are connected…

介观与纳米尺度物理 · 物理学 2022-10-14 Nadia Benlakhouy , Ahmed Jellal , El Houssine Atmani

We show that the strong coupling of pseudospin orientation and charge carrier motion in bilayer graphene has a drastic effect on transport properties of ballistic p-n-p junctions. Electronic states with zero momentum parallel to the barrier…

介观与纳米尺度物理 · 物理学 2011-11-29 Nan Gu , Mark Rudner , Leonid Levitov

Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer…

介观与纳米尺度物理 · 物理学 2023-11-02 Fang-Ming Jing , Guo-Quan Qin , Zhuo-Zhi Zhang , Xiang-Xiang Song , Guo-Ping Guo

We investigate quantum tunneling of charge carriers through a periodic superlattice in twisted bilayer graphene (TBG) with rectangular potential barriers, including the presence of a defect, using a low-energy continuum model. Transmission…

介观与纳米尺度物理 · 物理学 2026-01-08 Ayoub Bahlaoui , Youness Zahidi , Ahmed Naddami

Interference and tunneling are two signature quantum effects that are often perceived as the yin and yang of quantum mechanics: particle simultaneously propagating along several distinct classical paths versus particle penetrating through a…

介观与纳米尺度物理 · 物理学 2015-03-17 Rahul Nandkishore , Leonid Levitov

Transport measurement of electron optics in monolayer graphene p-n junction devices has been traditionally studied with negative refraction and chiral transmission experiments in Hallbar magnetic focusing set-ups. We show direct signatures…

介观与纳米尺度物理 · 物理学 2022-10-20 Mirza M. Elahi , Yihang Zeng , Cory R. Dean , Avik W. Ghosh

Due to Klein tunneling, electrostatic confinement of electrons in graphene is not possible. This hinders the use of graphene for quantum dot applications. Only through quasi-bound states with finite lifetime has one achieved to confine…

介观与纳米尺度物理 · 物理学 2018-05-29 Hasan M. Abdullah , M. Van der Donck , H. Bahlouli , F. M. Peeters , B. Van Duppen

Klein tunneling in gapless bilayer graphene, perfect reflection of electrons injecting normal to a pn junction, is expected to disappear in the presence of energy band gap induced by external gates. We theoretically show that the Klein…

介观与纳米尺度物理 · 物理学 2012-06-12 Sunghun Park , H. -S. Sim

The electronic tunneling properties of the two stable forms of trilayer graphene (TLG), rhombohedral ABC and Bernal ABA, are examined for pn and pnp junctions as realized by using a single gate (SG) or a double gate (DG). For the…

介观与纳米尺度物理 · 物理学 2013-05-28 B. Van Duppen , S. H. R. Sena , F. M. Peeters

Klein tunneling and conductance for Dirac fermions in ABC-stacked trilayer graphene (ABC-TLG) through symmetric and asymmetric double potential barriers are investigated using the two and six-band continuum model. Numerical results for our…

介观与纳米尺度物理 · 物理学 2021-10-01 Abderrahim El Mouhafid , Ahmed Jellal , Miloud Mekkaoui

The observation of quantum conductance oscillations in mesoscopic systems has traditionally required the confinement of the carriers to a phase space of reduced dimensionality. While electron optics such as lensing and focusing have been…

介观与纳米尺度物理 · 物理学 2009-03-20 Andrea F. Young , Philip Kim

Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile…

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