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The development of spintronic emitters of broadband THz pulses relies on designing heterostructures where processes of laser-driven spin current generation and subsequent spin-to-charge current conversion are the most efficient. An…
We demonstrate that photoemission properties of GaAs photocathodes (PCs) can be altered by surface acoustic waves (SAWs) generated on the PC surface due to dynamical piezoelectric fields of SAWs. Simulations with COMSOL indicate that…
We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As+ ionimplantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have…
Measuring terahertz (THz) conductivity on an ultrafast time scale is an excellent way to observe charge-carrier dynamics in semiconductors as a function of time after photoexcitation. However, a conductivity measurement alone cannot…
A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…
The in-plane photoelectric (IPPE) effect is a recently discovered [Sci. Adv. \textbf{8}, eabi8398 (2022)] quantum phenomenon which enables efficient detection of terahertz (THz) radiation in semiconductor structures with a two-dimensional…
We study THz-driven condensate dynamics in epitaxial thin films of MgB$_{2}$, a prototype two-band superconductor (SC) with weak interband coupling. The temperature and excitation density dependent dynamics follow the behavior predicted by…
Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of extremely nonlinear optical effects in many materials through nonperturbative driving of elementary and collective excitations. However, such nonlinear…
Far-infrared cyclotron resonance photoconductivity (CRP) is investigated in HgTe quantum wells (QWs) of various widths grown on (013) oriented GaAs substrates. It is shown that CRP is caused by the heating of two-dimensional electron gas…
Recent intense electrical and optical studies of graphene have pushed the material to the forefront of optoelectronic research. Of particular interest is the few terahertz (THz) frequency regime where efficient light sources and highly…
High performance Terahertz (THz) photodetector has drawn wide attention and got great improvement due to its significant application in biomedical, astrophysics, nondestructive inspection, 6th generation communication system as well as…
The Teraherz (THz) photoresponse of a two-dimensional electron gas in the quantum Hall regime is investigated. We use a sample structure which is topologically equivalent to a Corbino geometry combined with a cross-gate technique. This…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
High peak and average power free-electron lasers (FELs) in the terahertz region (THz) require small diameter, low-emittance, and high voltage electron beams. This paper presents two 1.5-2 MV, 100-200 A, thermionic cathode electron source…
We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma fluxes expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…
Optical rectification is demonstrated in (110)-cut ZnGeP_2 (ZGP) providing broadband terahertz (THz) generation. The source is compared to both GaP and GaAs over a wavelength range of 1150 nm to 1600 nm and peak intensity range of 0.5…
We report the emission of strong coherent broadband terahertz radiation from 6H-Silicon-Carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the…
Organic based semiconductor materials offer emerging and sustainable solutions for solar energy conversion technologies and electronics. However, knowledge of their intrinsic (photo)physical properties and light-matter interactions is often…
We derive simple formulas to explain terahertz (THz) emission from semiconductor surfaces excited by a femtosecond (fs) laser. Femtosecond optical pulses with energies larger than the bandgap create photocarriers which travel and generate…