相关论文: Carrier dynamics in site- and structure-controlled…

Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K…

We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric…

We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on…

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb…

A quantum-kinetic approach to the ultrafast dynamics of carrier multiplication in semiconductor quantum dots is presented. We investigate the underlying dynamics in the electronic subband occupations and the time-resolved optical emission…

We show how the optical properties of a single semiconductor quantum dot can be controlled with a small dc voltage applied to a gate electrode. We find that the transmission spectrum of the neutral exciton exhibits two narrow lines with…

Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780…

Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated…

Dynamics of nonradiative excitons with large in-plane wave vectors forming a so-called reservoir is experimentally studied in a high-quality semiconductor structure containing a 14-nm shallow GaAs/Al$_{0.03}$Ga$_{0.97}$As quantum well by…

We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe…

We report on the observation of the strong coupling regime between a single GaAs quantum dot and a microdisk optical mode. Photoluminescence is performed at various temperatures to tune the quantum dot exciton with respect to the optical…

A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier…

Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…

We present a fully nonequilibrium calculation of the low-temperature transport properties of a single molecular quantum dot coupled to local phonon mode when an ac field is applied to the gate. The resonant behavior is shown in the…

Continuous particle exchange thermal machines require no time-dependent driving, can be realised in solid-state electronic devices, and miniaturised to nanometre scale. Quantum dots, providing a narrow energy filter and allowing to…

Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets,…

Quantum dots are arguably one of the best platforms for optically accessible spin based qubits. The paramount demand of extended qubit storage time can be met by using quantum-dot-confined dark exciton: a longlived electron-hole pair with…

We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…

The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence…

InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different…