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In low-dimensional systems, the combination of reduced dimensionality, strong interactions, and topology has led to a growing number of many-body quantum phenomena. Thermal transport, which is sensitive to all energy-carrying degrees of…

Two-Dimensional (2D) transition metal dichalcogenides (TMDs) have been the subject of extensive attention thanks to their unique properties and atomically thin structure. Because of its unprecedented room-temperature magnetic properties,…

材料科学 · 物理学 2024-12-10 Elham Easy , Mengqi Fang , Mingxing Li , Eui-Hyeok Yang , Xian Zhang

We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the…

We report low temperature transport measurements on suspended single walled carbon nanotubes (both individual tubes and ropes). The technique we have developed, where tubes are soldered on low resistive metallic contacts across a slit,…

介观与纳米尺度物理 · 物理学 2009-11-10 A. Kasumov , M. Kociak , M. Ferrier , R. Deblock , S. Gueron , B. Reulet , I. Khodos , O. Stephan , H. Bouchiat

The application of two-dimensional (2D) semiconductors, such as monolayer MoS2, is limited by the high contact resistance commonly attributed to interfacial barriers at metal contacts. Furthermore, the dependence of electrical conductivity…

Molecules of bisthiolterthiophene have been adsorbed on the two facing gold electrodes of a mechanically controllable break junction in order to form metal-molecule(s)-metal junctions. Current-voltage (I-V) characteristics have been…

介观与纳米尺度物理 · 物理学 2009-10-31 C. Kergueris , J. -P. Bourgoin , S. Palacin , D. Esteve , C. Urbina , M. Magoga , C. Joachim

We report transport measurements of electrons on helium in a microchannel device where the channels are 200 nm deep and 3 $\mu$m wide. The channels are fabricated above amorphous metallic Ta$_{40}$W$_{40}$Si$_{20}$, which has surface…

介观与纳米尺度物理 · 物理学 2019-01-10 A. T. Asfaw , E. I. Kleinbaum , M. D. Henry , E. A. Shaner , S. A. Lyon

$\mathrm{MoS_2}$ is an emergent van der Waals material that shows promising prospects in semiconductor industry and optoelectronic applications. However, its electronic properties are not yet fully understood. In particular, the nature of…

介观与纳米尺度物理 · 物理学 2023-08-30 Michele Masseroni , Tingyu Qu , Takashi Taniguchi , Kenji Watanabe , Thomas Ihn , Klaus Ensslin

Layered molybdenum dichalchogenides are semiconductors whose gap is controlled by delicate interlayer interactions. The gap tends to drop together with the interlayer distance, suggesting collapse and metallization under pressure. We…

材料科学 · 物理学 2016-05-18 Michaela Rifliková , Roman Martoňák , Erio Tosatti

We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…

介观与纳米尺度物理 · 物理学 2014-08-22 Dmitry Ovchinnikov , Adrien Allain , Ying-Sheng Huang , Dumitru Dumcenco , Andras Kis

This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response…

Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have…

Molybdenum disulfide (MoS2) has drawn great interest for tunable photonics and optoelectronics advancement. Its solution processing, though scalable, results in randomly networked ensembles of discrete nanosheets with compromised properties…

Transition metal dichalcogenides (TMDs) represent a large family of high-quality 2D materials with attractive electronic, thermal, chemical, and mechanical properties. Chemical vapour deposition (CVD) technique is currently the most…

We report the observation of electric-field-induced superconductivity on the surface of bulk polycrystalline MoS2 using electric double-layer doping. A gate voltage applied in an ionic liquid environment systematically increased carrier…

超导电性 · 物理学 2025-09-04 Yoshihiro Shimazu , Tomonori Miyatake , Kento Ueno , Masatomo Uehara

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively…

介观与纳米尺度物理 · 物理学 2015-06-12 Wenzhong Bao , Xinghan Cai , Dohun Kim , Karthik Sridhara , Michael S. Fuhrer

The single-layer Mott insulator strontium iridate Sr$_2$IrO$_4$ was studied using a scanning tunneling microscope. This measurement technique is unique due to the transport properties of this Mott insulator allowing tunneling measurements…

强关联电子 · 物理学 2014-10-22 John Nichols , Noah Bray-Ali , Gang Cao , Kwok-Wai Ng

We have investigated the impact of toxic N2O gas upon structural and electronic properties of 2D MoSe2 monolayer using DFT approach. In this work, as a result of N2O gas absorption, charge transfer, band gap and density of states (DOS) are…

材料科学 · 物理学 2020-08-18 N. Mishra , Bramha P. Pandey

Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS$_2$), are emerging as promising materials for next-generation electronic devices. They have proved to be serious candidates for integration with…

Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…

介观与纳米尺度物理 · 物理学 2020-04-14 Ashby Phillip John , Arya Thenapparambil , Madhu Thalakulam