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We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate…

介观与纳米尺度物理 · 物理学 2012-10-16 A. Castellanos-Gomez , Arramel , M. Wojtaszek , R. H. M. Smit , N. Tombros , N. Agraït , B. J. van Wees , G. Rubio-Bollinger

We introduce the idea that the electronic band structure of a charge density wave system may mimic the electronic structure of graphene. In that case a class of materials quite different from graphene might be opened up to exploit…

介观与纳米尺度物理 · 物理学 2017-11-22 John M. Vail , Oscar J. Hernandez , Ming-Su Si , Zhoufei Wang

We perform first-principles calculations of electron transport across a nickel-graphene interface. Four different geometries are considered, where the contact area, graphene and nickel surface orientations and the passivation of the…

介观与纳米尺度物理 · 物理学 2012-05-01 Kurt Stokbro , Mads Engelund , Anders Blom

We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases,…

材料科学 · 物理学 2007-12-17 Zhihong Chen , Yu-Ming Lin , Michael J. Rooks , Phaedon Avouris

Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the…

Inverse design of materials with desired properties is currently laborious and heavily relies on intuition of researchers through a trial-and-error process. The massive combinational spaces due to the constituent elements and their…

计算物理 · 物理学 2019-08-22 Yuan Dong , Dawei Li , Chi Zhang , Chuhan Wu , Hong Wang , Ming Xin , Jianlin Cheng , Jian Lin

We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by…

介观与纳米尺度物理 · 物理学 2012-10-10 S. Dröscher , C. Barraud , K. Watanabe , T. Taniguchi , T. Ihn , K. Ensslin

Bilayer graphene (BLG) possesses a finite bandgap when a potential difference is introduced between the two graphene layers. The potential difference is known to be introduced by surface charge transfer. Thus, it is expected that a finite…

材料科学 · 物理学 2014-12-04 Ryo Nouchi

We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial…

One of severe limits of graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effect transistors (FETs). In this paper, using tight-binding approach and first principles…

介观与纳米尺度物理 · 物理学 2015-05-28 Aihua Zhang , Yihong Wu , San-Huang Ke , Yuan Ping Feng , Chun Zhang

Theoretical progress in graphene physics has largely relied on the application of a simple nearest-neighbor tight-binding model capable of predicting many of the electronic properties of this material. However, important features that…

介观与纳米尺度物理 · 物理学 2019-04-03 Z. M. Abd El-Fattah , M. A. Kher-Elden , I. Piquero-Zulaica , F. J. Garcia de Abajo , J. E. Ortega

Straining graphene results in the appearance of a pseudo-magnetic field which alters its local electronic properties. Applying a pressure difference between the two sides of the membrane causes it to bend/bulge resulting in a resistance…

介观与纳米尺度物理 · 物理学 2017-08-03 S. P. Milovanovic , M. Z. Tadic , F. M. Peeters

Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the…

We introduce graphene antidot lattice waveguides: nanostructured graphene where a region of pristine graphene is sandwiched between regions of graphene antidot lattices. The band gap in the surrounding antidot lattices enable localized…

介观与纳米尺度物理 · 物理学 2013-06-11 Jesper Goor Pedersen , Tue Gunst , Troels Markussen , Thomas Garm Pedersen

We report on several unusual properties of a graphene antidot created by a piecewise constant potential in a magnetic field. We find that the total probability of finding the electron in the barrier can be nearly one while it is almost zero…

介观与纳米尺度物理 · 物理学 2010-09-08 P. S. Park , S. C. Kim , S. -R. Eric Yang

The reflectivity of low energy electrons from graphene on copper substrates is studied both experimentally and theoretically. Well-known oscillations in the reflectivity of electrons with energies 0 - 8 eV above the vacuum level are…

介观与纳米尺度物理 · 物理学 2015-06-15 N. Srivastava , Qin Gao , M. Widom , R. M. Feenstra , Shu Nie , K. F. McCarty , I. V. Vlassiouk

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…

介观与纳米尺度物理 · 物理学 2014-04-03 Viet Hung Nguyen , Huy Viet Nguyen , Philippe Dollfus

Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene…

Flexoelectricity phenomenon is the response of electric polarization to an applied strain gradient and is developed as a consequence of crystal symmetry in all materials. In this study, we show that the presence of strain gradient in…

计算物理 · 物理学 2017-03-03 S. I. Kundalwal , S. A. Meguid , G. J. Weng

We show theoretically that graphene, which exhibits a massless Dirac like spectrum for its electrons, can exhibit unconventional Kondo effect that can be tuned by an experimentally controllable applied gate voltage. We demonstrate the…

强关联电子 · 物理学 2009-11-13 K. Sengupta , G. Baskaran