相关论文: Experimental observation of a large ac-spin Hall e…

Photovoltaic effect, e.g., solar cells, converts light into DC electric current. This phenomenon takes place in various setups such as in noncentrosymmetric crystals and semiconductor pn junctions. Recently, we proposed a theory for…

The inverse spin Hall effect used for detection of spin currents was observed by voltage measurements in bilayers of normal metal (NM)/ferromagnetic metal (FM), using Nb, Mo and Bi as normal metal and Permalloy (Py, Ni$_{81}$Fe$_{19}$) as…

We propose a spin Hall device to induce a large spin Hall effect in a superconductor/normal metal (SN) junction. The side jump and skew scattering mechanisms are both taken into account to calculate the extrinsic spin Hall conductivity in…

We study the time-development processes of spin and charge transport phenomena in a topological Dirac semimetal attached to a ferromagnetic insulator with a precessing magnetization. Compared to conventional normal metals, topological Dirac…

Generation, manipulation, and detection of a pure spin current, i.e., the flow of spin angular momentum without a charge current, are prospective approaches for realizing next-generation spintronic devices with ultra low electric power…

The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin…

We report direct electrical detection of spin pumping, using a lateral normal metal/ferromagnet/normal metal device, where a single ferromagnet in ferromagnetic resonance pumps spin polarized electrons into the normal metal, resulting in…

We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch…

Since spin currents can be generated, detected, and manipulated via the spin Hall effect (SHE), the design of strong SHE materials has become a focus in the field of spintronics. Because of the recent experimental progress also the spin…

We report a novel mechanism for the electrical injection and detection of out-of-plane spin accumulation via the anomalous spin Hall effect (ASHE), where the direction of the spin accumulation can be controlled by manipulating the…

Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse…

We generalize the spin Hall angle to laser pulses of finite frequencies in the linear response regime and predict a giant optical spin Hall effect. Namely, for certain transition metal elements, at particular frequencies, the spin current…

We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be…

A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…

The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization…

In ferromagnetic metals, the interconversion of spin and charge currents via the spin Hall effect and its inverse can depend on the angle between the ferromagnets magnetization and the spin current polarization direction. Here, such a…

Spin Hall effect provides an efficient tool for the conversion of a charge current into a spin current, opening the possibility of producing pure spin currents in non-magnetic materials for the next generation of spintronics devices. In…

Charge-to-spin conversion in various material systems is the key for the fundamental understanding of spin-orbitronis as well as the development of efficient means to manipulate the magnetization. We report the direct spatial imaging of…

The abilities to inject and detect spin carriers are fundamental for research on transport and manipulation of spin information. Pure electronic spin currents have been recently studied in nanoscale electronic devices using a non-local…

Extensive efforts are currently being devoted to developing a new electronic technology, called spintronics, where the spin of electrons is explored to carry information. [1,2] Several techniques have been developed to generate pure spin…