相关论文: AC/DC Spin and Valley Hall Effects in Silicene and…
We study the intrinsic spin Hall conductivity (SHC) and the $d$-orbital Hall conductivity (OHC) in metallic $d$-electron systems based on the multiorbital tight-binding model. The obtained Hall conductivities are much larger than that in…
We present a numerical study of the spin Hall effect in a two-dimensional hole gas (2DHG) system in the presence of disorder. We find that the spin Hall conductance (SHC), extrapolated to the thermodynamic limit, remains finite in a wide…
We present measurements of the spin Seebeck effect (SSE) by a technique that combines alternating currents (AC) and direct currents (DC). The method is applied to a ferrimagnetic insulator/heavy metal bilayer, Y$_3$Fe$_5$O$_{12}$(YIG)/Pt.…
We propose and analyze a mechanism for inducing spin Hall currents in ordinary (1H phase) monolayer transition metal dichalcogenides (TMDs) due to the nonlinear process of optical rectification. The photo-induced spin current is…
Based on the tight-binding formalism, we study the effect of side potential on the spin and valley related electronic property of $2$D honeycomb lattices with intrinsic spin-orbit coupling, such as silicene and germanene. The side potential…
We envision that quantum spin Hall effect should be observed in $(111)$-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band…
Motivated by a recent experiment[Nature {\bf 442}, 176 (2006)], we present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit…
Based on a Dirac-like Hamiltonian and coherent scattering formalism, we study spin-valley transport and Goos-H\"{a}nchen like (GHL) effect of transmitted and reflected electrons in a gated monolayer WS$_2$. Our results show that the lateral…
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit…
Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a…
We consider the current-induced dynamics of insulating antiferromagnets in a spin Hall geometry. Sufficiently large in-plane currents perpendicular to the N\'{e}el order trigger spontaneous oscillations at frequencies between the acoustic…
The observation of large nonlocal resistances near the Dirac point in graphene has been related to a variety of intrinsic Hall effects, where the spin or valley degrees of freedom are controlled by symmetry breaking mechanisms. Engineering…
First-principles calculations are applied to study spin Hall effect in semiconductors and simple metals. We found that intrinsic spin Hall conductivity (ISHC) in realistic materials shows rich sign changes, which may be used to distinguish…
Valley-related multiple Hall effect in 2D lattice is a fundamental transport phenomenon in the fields of condensed-matter physics and material science. So far, most proposals for its realization are limited to toy models or extrinsic…
We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC),…
We consider spin Hall effect in a system of massless Dirac fermions in a graphene lattice. Two types of spin-orbit interaction, pertinent to the graphene lattice, are taken into account - the intrinsic and Rashba terms. Assuming perfect…
Valley-based electronics, known as valleytronics, is one of the keys to break through to a new stage of electronics. The valley degree of freedom is ubiquitous in the honeycomb lattice system. The honeycomb lattice structure of silicon…
We propose a spin Hall device to induce a large spin Hall effect in a superconductor/normal metal (SN) junction. The side jump and skew scattering mechanisms are both taken into account to calculate the extrinsic spin Hall conductivity in…
The interplay of massive electrons with spin-orbit coupling in bulk graphene results in a spin-valley dependent gap. Thus, a barrier with such properties can act as a filter, transmitting only opposite spins from opposite valleys. In this…
We establish topological nature of Hall conductivity of graphene and other $Z_2$ crystals in 2D and 3D in the presence of inhomogeneous perturbations. To this end the lattice Weyl-Wigner formalism is employed. The non-uniform mechanical…