相关论文: Effect of weak impurities on electronic properties…

It is demonstrated that there is a characteristic impurity concentration, at which variation with concentration and overall appearance of the local density of states at the impurity site in graphene are changing their behavior. Features…

We study theoretically the effects of short-range electron-electron interactions on the electronic structure of graphene, in the presence of single substitutional impurities. Our computational approach is based on the $\pi$ orbital…

Based on the calculation and analysis of local Green functions of impurity atoms of low concentration in a two-dimensional graphene lattice, the conditions for the formation and characteristics of local discrete levels with energies lying…

Unique electronic band structure of graphene with its semi-metallic features near the charge neutrality point is sensitive to impurity effects. Using the Lifshitz and Anderson impurity models, we study in detail the disorder induced…

We obtain a novel bound state spectrum of the low energy excitations near the Fermi points of graphene in the presence of a charge impurity. The effects of possible short range interactions induced by the impurity are modelled by suitable…

Defects in graphene are of crucial importance for its electronic and magnetic properties. Here impurity effects on the electronic structure of surrounding carbon atoms are considered and the distribution of the local densities of states…

We give an update of the situation concerning the effect of electron-electron interactions on the physics of a neutral graphene system at low energies. We revise old renormalization group results and the use of 1/N expansion to address…

The effects of the electron-electron interactions in a graphene layer are investigated. It is shown that short range couplings are irrelevant, and scale towards zero at low energies, due to the vanishing of density of states at the Fermi…

The effect of substitution atoms on the energy spectrum and the electrical conductivity of graphene was investigated in a Lifshitz one-electron tight-binding model. It is established that the ordering of impurity atoms results in a gap in…

We calculate the average single particle density of states in graphene with disorder due to impurity potentials. For unscreened short-ranged impurities, we use the non-self-consistent and self-consistent Born and $T$-matrix approximations…

We study rectangular graphene flakes using mean field states as the basis for a configuration interaction calculation, which allows us to analyze the low lying electronic excited states including electron correlations beyond the mean field…

The electrical conductivity of graphene containing point defects is studied within the binary alloy model in its dependence on the Fermi level position at the zero temperature. It is found that the minimal conductivity value does not have a…

Two-dimensional carbon, or graphene, is a semi-metal that presents unusual low-energy electronic excitations described in terms of Dirac fermions. We analyze in a self-consistent way the effects of localized (impurities or vacancies) and…

We study the effect of impurities in superconducting graphene and discuss their influence on the local electronic properties. In particular, we consider the case of magnetic and non-magnetic impurities being either strongly localized or…

This work analyses how impurities and vacancies on the surface of a graphene sample affect its optical conductivity and plasmon excitations. The disorder is analysed in the self-consistent Green's function formulation and nonlocal effects…

Using the tight-binding model with long-range Coulomb interactions between electrons, we study some of the electronic properties of graphene. The Coulomb interactions are treated with the renormalized-ring-diagram approximation. By…

We present calculations of the thermal and electric linear response in graphene, including disorder in the self-consistent t-matrix approximation. For strong impurity scattering, near the unitary limit, the formation of a band of impurity…

We study the problem of impurities and mid-gap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field…

Unitary limit for model point scatterers in graphene is known to reveal low-energy resonances. The same limit could be achieved from hybridization of band electrons with the localized impurity level positioned in the vicinity of the Fermi…

We calculate the carrier density dependent ground state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects non-perturbatively on an equal footing in a…