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The influence of the Hall voltage on the photoluminescence of a dense hydrodynamic electron-hole plasma laser generated in a mesoscopic n-doped GaAs channel under intense laser excitation is studied. Laser excitation induces an interband…

介观与纳米尺度物理 · 物理学 2026-05-19 Yu. A. Pusep , M. A. T. Patricio , G. M. Jacobsen , M. D. Teodoro , G. M. Gusev , A. K. Bakarov

We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction…

介观与纳米尺度物理 · 物理学 2016-08-03 V Ryzhii , M Ryzhii , M S Shur , V Mitin , A Satou , T Otsuji

We report on observation of the infrared photoresistance of twisted bilayer graphene under continuous quantum cascade laser illumination at a frequency of 57.1 THz. The photoresistance shows an intricate sign-alternating behavior under…

介观与纳米尺度物理 · 物理学 2022-08-04 S. Hubmann , G. Di Battista , I. A. Dmitriev , K. Watanabe , T. Taniguchi , D. K. Efetov , S. D. Ganichev

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to graphene$'$s superior electron mobility. Previously it has been shown that graphene field effect transistors…

介观与纳米尺度物理 · 物理学 2018-04-04 D. A. Bandurin , I. Gayduchencko , Y. Cao , M. Moskotin , A. Principi , I. V. Grigorieva , G. Goltsman , G. Fedorov , D. Svintsov

We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the metallic regime. The effect of gate-tunable charge density in…

介观与纳米尺度物理 · 物理学 2012-11-16 K. Kechedzhi , E. H. Hwang , S. Das Sarma

We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport…

介观与纳米尺度物理 · 物理学 2012-03-09 Ajay K. Bhat , Vibhor Singh , Sunil Patil , Mandar M. Deshmukh

We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…

In the present paper we consider the nonlinear interaction of high frequency intense electromagnetic (EM) beam with degenerate electron plasmas. In a slowly varying envelop approximation the beam dynamics is described by the couple of…

等离子体物理 · 物理学 2021-05-19 V. I. Berezhiani , Z. N. Osmanov , S. M. Mahajan , S. V. Mikeladze

We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable $I$-$V$ characteristics arise from resonant tunneling and interlayer charge…

介观与纳米尺度物理 · 物理学 2016-08-19 Joaquin F. Rodriguez-Nieva , Mildred S. Dresselhaus , Leonid S. Levitov

Electrostatic Gravitational or Rayleigh-Taylor (RT) instability in an inhomogeneous magnetized multi-ions plasma with some fraction of quantum mechanical electrons. The effect of Bohm potential, temperature degeneracy and magnetic field are…

等离子体物理 · 物理学 2018-05-08 A. Mushtaq , Sajad Ali , Zahida Ehsan

Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room…

Capacitively coupled radio-frequency (CCRF) CF_4 plasmas have been found to exhibit a self-organized striated structure at operating conditions, where the plasma is strongly electronegative and the ion-ion plasma in the bulk region (largely…

等离子体物理 · 物理学 2017-08-02 Yong-Xin Liu , Ihor Korolov , Edmund Schüngel , You-Nian Wang , Zoltán Donkó , Julian Schulze

For a collisionless plasma in contact with a dielectric surface, where with unit probability electrons and ions are, respectively, absorbed and neutralized, thereby injecting electrons and holes into the conduction and valence band, we…

等离子体物理 · 物理学 2020-08-19 K. Rasek , F. X. Bronold , H. Fehske

Conductivity of monolayer and two-layer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag in conductivity shows that this effect can sufficiently influence on mobility of…

介观与纳米尺度物理 · 物理学 2010-11-05 I. I. Boiko

We analyze the operation of a resonant detector of terahertz (THz) radiation based on a two-dimensional electron gas (2DEG) channel with split gates. The side gates are used for the excitation of plasma oscillations by incoming THz…

其他凝聚态物理 · 物理学 2009-11-13 V. Ryzhii , A. Satou , T. Otsuji , M. S. Shur

We investigate the electron-hole two-stream instability (or Coulomb drag) in intrinsic bilayer graphene in the hydrodynamic regime, accounting for the effects of temperature, initial drift velocity, magnetic field, and collisions. The…

介观与纳米尺度物理 · 物理学 2022-12-05 Vasco Pinhão , Pedro Cosme , Hugo Terças

Motivated by the observation that electrons in graphene, in the hydrodynamic regime of transport, can be treated as a two-dimensional ultra-relativistic gas with very low shear viscosity, we examine the existence of the Rayleigh-B\'enard…

介观与纳米尺度物理 · 物理学 2015-04-22 Oliver Furtmaier , Miller Mendoza , Ilya Karlin , Sauro Succi , Hans Jürgen Herrmann

We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors…

介观与纳米尺度物理 · 物理学 2022-09-14 V. Ryzhii , T. Otsuji , M. Ryzhii , V. Mitin , M. S. Shur

We present a self-consistent kinetic theory for the electronic response of a plasma-facing dielectric solid. Based on the Poisson equation and two sets of spatially separated Boltzmann equations, one for electrons and ions in the plasma and…

等离子体物理 · 物理学 2017-08-02 Franz X. Bronold , Holger Fehske

Bilayers consisting of two-dimensional (2D) electron and hole gases separated by a 10 nm thick AlGaAs barrier are formed by charge accumulation in epitaxially grown GaAs. Both vertical and lateral electric transport are measured in the…

介观与纳米尺度物理 · 物理学 2023-10-13 M. L. Davis , S. Parolo , C. Reichl , W. Dietsche , W. Wegscheider