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We present a first-principles study of the magnetotransport phenomena in p-doped diamond via the exact solution of the linearized Boltzmann transport equation, in which the materials' parameters, including electron-phonon and phonon-phonon…

材料科学 · 物理学 2018-11-21 Francesco Macheda , Nicola Bonini

Silicon can be heavily doped with phosphorus in a single atomic layer (a $\delta$ layer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope…

材料科学 · 物理学 2026-02-26 Quinn T. Campbell , Andrew D. Baczewski , Shashank Misra , Evan M. Anderson

Using first principle electronic structure calculations we investigated the role of substitutional doping of B,N,P,Al and vacancies (${\cal V}$) in diamond (X$_{\alpha}$C$_{1-\alpha}$). In the heavy doping regime, at about $\sim 1-6%$…

超导电性 · 物理学 2009-05-06 M. Alaei , S. Akbar Jafari , H. Akbarzadeh

In this work, the electronic and optical properties of a Nitrogen (N) or a Boron (B) doped BeO monolayer are investigated in the framework of density functional theory. It is known that the band gap of a BeO monolayer is large leading to…

Diamond and many newly emerged semiconductor materials show outstanding optical and magnetic properties. However, they cannot be as efficiently doped as silicon or gallium arsenide, which limits their practical applicability. Here, we…

应用物理 · 物理学 2019-04-29 Igor A. Khramtsov , Dmitry Yu. Fedyanin

Metallic dopants have the potential to increase the mechanical strength of polycrystalline metals. These elements are expected to aggregate in regions of lower coordination, such as grain boundaries. At the grain boundaries, they can have a…

材料科学 · 物理学 2024-07-18 Vasileios Fotopoulos , Jack Strand , Manuel Petersmann , Alexander L. Shluger

Comparison of periodic B dopants with a random alloy of substitional boron in diamond is carried out using several supercells and the coherent potential approximation (CPA) for the random alloy case. The main peak in the B local density of…

超导电性 · 物理学 2007-05-23 K. -W. Lee , W. E. Pickett

Gas phase density-functional theory (DFT) and time-dependent DFT (TD-DFT) calculations are reported for a data base of 98 ruthenium(II) polypyridine complexes. Comparison with X-ray crystal geometries and with experimental absorption…

化学物理 · 物理学 2023-11-06 Denis Magero , Mark E. Casida , George Amolo , Nicholas Makau , Lusweti Kituyi

We have performed high resolution photoemission study of substitutionally disordered alloys Cu-Pt, Cu-Pd, Cu-Ni, and Pd-Pt. The ratios between alloy spectra and pure metal spectra are found to have dips at the Fermi level when the residual…

强关联电子 · 物理学 2009-10-31 Han-Jin Noh , Tschang-Uh Nahm , Jae-Young Kim , W. -G. Park , S. -J. Oh , J. -P. Hong , C. -O. Kim

Silicon quantum dots are nanomaterials that are attractive candidates for photovoltaic applications. Doping of these materials creates p-n junctions and is important for solar cells. In this work, we present a first-principles study of the…

材料科学 · 物理学 2025-04-23 Swarnava Ghosh , Markus Eisenbach

The size-dependent electronic, structural, magnetic and vibrational properties of small pure cop- per and silver clusters and their alloys with one and two palladium atoms are studied by using full-potential all-electron density functional…

The quantum interference effect on the quasiparticle density of states (DOS) is studied with the diagrammatic technique in two-dimensional d-wave superconductors with dilute nonmagnetic impurities both near the Born and near the unitary…

超导电性 · 物理学 2007-05-23 Y. H. Yang , Y. G. Wang , M. Liu , D. Y. Xing

Renewed focus on the P-Si system due to its potential application in quantum computing and self-directed growth of molecular wires, has led us to study structural changes induced by P upon placement on Si(001)-$p(2\times 1)$. Using…

材料科学 · 物理学 2009-11-11 Prasenjit Sen , Bikash C Gupta , Inder P. Batra

In this work we investigate doping and temperature dependences of electronic structure of system with strong electronic correlations and strong electron-phonon interaction modeling cuprates in the frameworks of the three-band p-d-Holstein…

强关联电子 · 物理学 2016-12-09 I. A. Makarov , S. G. Ovchinnikov

Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band (VB) of pristine…

Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while…

材料科学 · 物理学 2009-11-13 G. Giovannetti , P. A. Khomyakov , G. Brocks , V. M. Karpan , J. van den Brink , P. J. Kelly

Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer…

We consider superconductivity in boron (B) doped diamond using a simplified model for the valence band of diamond. We treat the effects of substitutional disorder of B ions by the coherent potential approximation (CPA) and those of the…

超导电性 · 物理学 2015-06-25 T. Shirakawa , S. Horiuchi , Y. Ohta , H. Fukuyama

We report density functional calculations of the electronic structure and Fermi surface of the BaFe$_2$As$_2$ and LiFeAs phases including doping via the virtual crystal approximation. The results show that contrary to a rigid band picture,…

超导电性 · 物理学 2008-09-19 D. J. Singh

The revealing properties of transition metal (T)-doped graphene systems are investigated with the use of the first-principles method. The detailed calculations cover the bond length, position and height of adatoms, binding energy,…

材料科学 · 物理学 2019-05-06 Ngoc Thanh Thuy Tran , Duy Khanh Nguyen , Shih-Yang Lin , Godfrey Gumbs , Ming Fa-Lin