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相关论文: Mott-Hubbard transition in V2O3 revisited

200 篇论文

In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is…

强关联电子 · 物理学 2007-05-23 Leonid Didukh , Vasyl Hankevych

We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic…

材料科学 · 物理学 2013-01-08 Jian-Min Zhang , Wenguang Zhu , Ying Zhang , Di Xiao , Yugui Yao

A slave boson representation for the degenerate Hubbard model is introduced. The location of the metal to insulator transition that occurs at commensurate densities is shown to depend weakly on the band degeneracy M. The relative weights of…

强关联电子 · 物理学 2016-08-31 Raymond Fresard , Gabriel Kotliar

We present a detailed account of the physics of Vanadium sesquioxide (${\rm V_2O_3}$), a benchmark system for studying correlation induced metal-insulator transition(s). Based on a detailed perusal of a wide range of experimental data, we…

强关联电子 · 物理学 2009-11-11 M. S. Laad , L. Craco , E. Müller-Hartmann

We have investigated the antiferromagnetic phase of the 2D, the 3D and the extended Hubbard models on a bipartite cubic lattice by means of the Composite Operator Method within a two-pole approximation. This approach yields a fully…

强关联电子 · 物理学 2009-09-25 Adolfo Avella , Ferdinando Mancini , Roland Muenzner

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson

We address the nature of the Mott transition in the Hubbard model at half-filling using cluster Dynamical Mean Field Theory (DMFT). We compare cluster DMFT results with those of single site DMFT. We show that inclusion of the short range…

强关联电子 · 物理学 2009-11-13 H. Park , K. Haule , G. Kotliar

The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit…

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…

We studied the changes in the electronic structure of V2O3 using a cluster model. The calculations included fluctuations from the coherent band in the metallic phase, and non-local Mott-Hubbard fluctuations in the insulating phase. The…

强关联电子 · 物理学 2015-06-25 R. J. O. Mossanek , M. Abbate

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

We study analytically the Mott transition of the N-orbital Hubbard model using dynamical mean-field theory and a low-energy projection onto an effective Kondo model. It is demonstrated that the critical interaction at which the insulator…

强关联电子 · 物理学 2009-11-07 S. Florens , A. Georges , G. Kotliar , O. Parcollet

In addition to Anderson and Mott localization, intrinsic phase separation has long been advocated as the third fundamental mechanism controlling the doping-driven metal-insulator transitions. In electronic system, where charge neutrality…

强关联电子 · 物理学 2011-05-18 Hanna Terletska , Vladimir Dobrosavljević

We study the Mott transition, antiferromagnetism and superconductivity in layered organic conductors using Cellular Dynamical Mean Field Theory for the frustrated Hubbard model. A d-wave superconducting phase appears between an…

强关联电子 · 物理学 2009-11-11 B. Kyung , A. -M. S. Tremblay

Doping of a Mott insulator gives rise to a wide variety of exotic emergent states, from high-temperature superconductivity to charge, spin, and orbital orders. The physics underpinning their evolution is, however, poorly understood. A major…

We study the two-dimensional Kane-Mele-Hubbard model at half filling by means of quantum Monte Carlo simulations. We present a refined phase boundary for the quantum spin liquid. The topological insulator at finite Hubbard interaction…

强关联电子 · 物理学 2012-03-30 M. Hohenadler , Z. Y. Meng , T. C. Lang , S. Wessel , A. Muramatsu , F. F. Assaad

The last few decades has seen the rapid growth of interest in the bulk perovskite-type transition metal oxides SrVO$_3$ and SrTiO$_3$. The electronic configuration of these perovskites differs by one electron associated to the transition…

强关联电子 · 物理学 2023-09-04 A. D. N. James , M. Aichhorn , J. Laverock

To understand the essence of the exciton Mott transition in three-dimensional electron-hole systems, the metal-insulator transition is studied for a two-band Hubbard model in infinite dimensions with interactions of electron-electron…

强关联电子 · 物理学 2007-05-23 Yuh Tomio , Tetsuo Ogawa

Using a Rayleigh-Schr\"odinger perturbation expansion of multi-band Hubbard models, we present analytic expressions for the super-exchange coupling constants between magnetic transition metal ions of arbitrary separation in Mott-Hubbard…

强关联电子 · 物理学 2009-10-30 Stefan Feldkemper , Werner Weber

The first-order metal-insulator transition (MIT) in paramagnetic $V_{2}O_{3}$ is studied within the ab-initio scheme LDA+DMFT, which merges the local density approximation (LDA) with dynamical mean field theory (DMFT). With a fixed value of…

强关联电子 · 物理学 2009-11-07 M. S. Laad , L. Craco , E. Müller-Hartmann