相关论文: Tuning of the Rashba effect in Pb quantum well sta…

We investigate theoretically the efficiency of the Rashba effect, i.e. the spin splitting resulting from an electric field. This is the mechanism behind the Datta-Das spin transistor. In the research efforts so far the carriers have usually…

Magneto-transport properties of a two-dimensional electron gas in a chain of planar quantum rings are investigated under the Rashba spin-orbit interaction and a transverse homogeneous magnetic field. A modulation potential function models…

Spin-momentum locking is essential to the spin-split Fermi surfaces of inversion-symmetry broken materials, which are caused by either Rashba-type or Zeeman-type spin-orbit coupling (SOC). While the effect of Zeeman-type SOC on…

We analyze the proper inclusion of electric-field-induced spin splittings in the framework of the envelope function approximation. We argue that the Rashba effect should be included in the form of a macroscopic potential as diagonal terms…

We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin…

Spin-split Rashba bands have been exploited to efficiently control the spin degree of freedom of moving electrons, which possesses a great potential in frontier applications of designing spintronic devices and processing spin-based…

We consider a single electron confined within a quantum wire in a system of two electrostatically-induced QDs defined by nearby gates. The time-varying electric field, of single GHz frequency, perpendicular to the quantum wire, is used to…

We consider Rashba spin-orbit effects on spin transport driven by an electric field in semiconductor quantum wells. We derive spin diffusion equations that are valid when the mean free path and the Rashba spin-orbit interaction vary on…

Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and…

The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new…

We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band-structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected…

We study effects of a gate-controlled Rashba spin-orbit coupling to quantum spin-Hall edge states in HgTe quantum wells. A uniform Rashba coupling can be employed in tuning the spin orientation of the edge states while preserving the…

We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…

Rashba precession of spins moving along a one-dimensional quantum channel is calculated, accounting for Coulomb interactions. The Tomonaga--Luttinger model is formulated in the presence of spin-orbit scattering and solved by Bosonization.…

The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark…

Changes dopant ion concentrations in the sides of a symmetric quantum well are known to create a random Rashba-type spin-orbit coupling. Here we demonstrate that, as a consequence, a finite size spin-Hall effect is also present. Our…

Strong spin-orbit coupling can have a profound effect on the electronic structure in a metal or semiconductor, particularly for low electron concentrations. We show how, for small values of the Fermi energy compared to the spin-orbit…

We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed co-planar…

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity…

In spintronic devices, the two main approaches to actively control the electrons' spin degree of freedom involve either static magnetic or electric fields. An alternative avenue relies on the application of optical fields to generate spin…