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相关论文: Universal scheme to generate metal-insulator trans…

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Controlling phase transitions in transition metal oxides remains a central feature of both technological and fundamental scientific relevance. A well-known example is the metal-insulator transition which has been shown to be highly…

We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…

无序系统与神经网络 · 物理学 2015-06-24 George Kastrinakis

Ground state of the periodic Anderson model on a triangular lattice is systematically investigated by the mean-field approximation. We found that the model exhibits two different types of partially disordered states: one is at half filling…

强关联电子 · 物理学 2014-07-30 Satoru Hayami , Masafumi Udagawa , Yukitoshi Motome

We investigate the metal-insulator transition in the half-filled Hubbard model on a two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique, and exact numerical diagonalization of finite clusters.…

强关联电子 · 物理学 2007-08-07 Massimo Capone , Luca Capriotti , Federico Becca , Sergio Caprara

We present an asymptotically exact renormalization-group theory of the superfluid--insulator transition in one-dimensional disordered systems, with emphasis on an accurate description of the interplay between the Giamarchi--Schulz…

强关联电子 · 物理学 2016-04-21 Zhiyuan Yao , Lode Pollet , Nikolay Prokof'ev , Boris Svistunov

We show that in the one-dimensional (1D) Anderson model long-range correlations within the sequence of on-site potentials may lead to a region of extended states in the vicinity of the band centre, i.e., to a correlation-induced…

强关联电子 · 物理学 2007-05-23 Gerald Schubert , Alexander Weisse , Holger Fehske

We propose a protocol to create maximally entangled pairs, triplets, quartiles, and other clusters of Bose condensed atoms starting from a condensate in the Mott insulator state. The essential element is to drive single atom Raman…

介观与纳米尺度物理 · 物理学 2009-11-07 Li You

Algebraic and geometric mean density of states in disordered systems may reveal properties of electronic localization. In order to understand the topological phases with disorder in two dimensions, we present the calculated density of…

介观与纳米尺度物理 · 物理学 2013-12-02 Yan-Yang Zhang , Shun-Qing Shen

In this letter, we have studied the effects of proximity of a superconductor to a normal metal. The system, represented by a bilayer attractive Hubbard model, is investigated using layer-dynamical mean field theory and iterated perturbation…

超导电性 · 物理学 2014-04-03 Naushad Ahmad Kamar , N. S. Vidhyadhiraja

We study the nature of the superfluid--insulator quantum phase transition in a one-dimensional system of lattice bosons with off-diagonal disorder in the limit of large integer filling factor. Monte Carlo simulations of two strongly…

介观与纳米尺度物理 · 物理学 2009-11-10 Karén G. Balabanyan , Nikolay Prokof'ev , Boris Svistunov

We investigate the possibility of using structural disorder to induce a topological phase in a solid state system. Using first-principles calculations, we introduce structural disorder in the trivial insulator BiTeI and observe the…

材料科学 · 物理学 2021-06-30 Paul Corbae , Frances Hellman , Sinead M. Griffin

We describe a general method to study the ground state phase diagram of electronic models on chains whose extended Hubbard hamiltonian is formed by a generalized permutator plus a band-controlling term. The method, based on the appropriate…

强关联电子 · 物理学 2009-10-31 F. Dolcini , A. Montorsi

We study the influence of scale-free correlated disorder on the metal-insulator transition in the Anderson model of localization. We use standard transfer matrix calculations and perform finite-size scaling of the largest inverse Lyapunov…

无序系统与神经网络 · 物理学 2012-06-05 Alexander Croy , Philipp Cain , Michael Schreiber

We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…

强关联电子 · 物理学 2018-12-03 Giuliano Chiriacò , Andrew J. Millis

We construct an effective Hamiltonian for the motion of electrons among the transition metal ions of ordered double perovskites like Sr2FeMoO6. in which strong intra-atomic Coulomb repulsion U is present in only one of the inequivalent…

强关联电子 · 物理学 2009-11-07 A. A. Aligia , P. Petrone , J. O. Sofo , B. Alascio

We present Monte Carlo simulations of surface induced disordering in a model of a binary alloy on a bcc lattice which undergoes a first order bulk transition from the ordered DO3 phase to the disordered A2 phase. The data are analyzed in…

统计力学 · 物理学 2009-10-31 F. F. Haas , F. Schmid , K. Binder

The conductance of disordered nano-wires at T=0 is calculated in one-particle approximation by reducing the original multi-dimensional problem for an open bounded system to a set of exactly one-dimensional non-Hermitian problems for mode…

无序系统与神经网络 · 物理学 2009-11-07 Yu. V. Tarasov

We introduce the spectrum bifurcation renormalization group (SBRG) as a generalization of the real-space renormalization group for the many-body localized (MBL) system without truncating the Hilbert space. Starting from a disordered…

强关联电子 · 物理学 2016-04-06 Yi-Zhuang You , Xiao-Liang Qi , Cenke Xu

As a measure to ascertain whether a system is metallic or insulating, localization length $\lambda_N$, which represents the spread of electron distribution, can be a useful quantity, especially for approaching a metal-insulator transition…

强关联电子 · 物理学 2016-05-31 Shun Tamura , Yokoyama Hisatoshi

Anderson localization transitions are a universal quantum phenomenon sensitive to the disorder and dimensionality of electronic systems. Over the past decades, this intriguing topic has inspired overwhelmingly more theoretical studies than…

介观与纳米尺度物理 · 物理学 2024-10-31 Jinhao Cheng , Chen Wang , Wenxue He , Jiaojiao Wang , Yifan Pang , Fan Yang , Shuaishuai Ding , Hechen Ren , Wenping Hu