相关论文: Optical and Electrical Characterization of Boron-D…

A review of electronic properties of insulating-, boron- and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p- and…

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the…

We report the magnetic response of high purity type IIa single crystal CVD diamond following high energy irradiation by 2.2 MeV proton micro-beams, produced using Nuclear Microprobe techniques. Post-irradiation microanalysis is achieved…

We substantiate by calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB$_2$, albeit in 3 dimensions. Holes at the top of the…

The mechanism of ballas like nano crystalline diamond formation (NCD) still remains elusive, and this work attempts to analyze its formation in the framework of activation energy ($E_\text{a}$) of NCD films grown from…

An all-diamond photonic circuit was implemented by integrating a diamond microsphere with a femtosecond-laser-written bulk diamond waveguide. The near surface waveguide was fabricated by exploiting the Type II fabrication method to achieve…

Ultra-wide bandgap and the absence of shallow dopants are the major challenges in realizing diamond based electronics. However, the surface functionalization offers an excellent alternative to tune electronic structure of diamonds. Herein,…

Fabrication of single nickel-nitrogen (NE8) defect centers in diamond by chemical vapor deposition is demonstrated. Under continuous-wave 745 nm laser excitation single defects were induced to emit single photon pulses at 797 nm with a…

A boron-oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide $\rm{B_2O_3}$ onto the hydrogen-terminated (100) diamond surface under ultrahigh vacuum conditions and annealing to $\rm{950^{\circ}…

Microwave plasma chemical vapor deposition (MPCVD) has been traditionally used to synthesize carbon-based materials such as diamonds, carbon nanotubes and graphene. Here we report that a rapid and catalyst-free growth of SnSe thin films can…

We present an approach for the CVD growth of diamond, where the sample is placed in a defined distance from the reactor baseplate, to which the plasma couples. We observe two previously unknown growth regimes. In the first case, the sample…

Comparison of periodic B dopants with a random alloy of substitional boron in diamond is carried out using several supercells and the coherent potential approximation (CPA) for the random alloy case. The main peak in the B local density of…

We study a setup where a single negatively-charged silicon-vacancy center in diamond is magnetically coupled to a low-frequency mechanical bending mode and via strain to the high-frequency phonon continuum of a semi-clamped diamond beam. We…

The negatively charged nitrogen-vacancy (NV-) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically < 0.5…

In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor…

We report fabrication and results of high-resolution X-ray topography characterization of diamond single crystal plates with a large surface area (10$\times$10 mm$^2$) and (111) crystal surface orientation for applications in high-heat-load…

The correlations between properties of hydrogenated diamond like carbon films and their Raman spectra have been investigated. The films are prepared by plasma deposition technique, keeping different hydrogen to methane ratio during the…

The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion…

The ability to optically initialize the electronic spin of the nitrogen-vacancy (NV) center in diamond has long been considered a valuable resource to enhance the polarization of neighboring nuclei, but efficient polarization transfer to…

Electron irradiation and annealing treatments are a method of colour centre/defect creation in diamond. The depth profile of defects created by low energy 200 keV electrons in single crystal high purity (type II) electronic grade diamond…