相关论文: Threshold current for switching of a perpendicular…
Conventional spintronic mechanisms, such as spin-transfer and spin-orbit torques based on the spin current, rely on breaking time-reversal symmetry to manipulate magnetic moments. In contrast, for spatially separated dual spin currents, the…
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike…
We consider the current-induced dynamics of insulating antiferromagnets in a spin Hall geometry. Sufficiently large in-plane currents perpendicular to the N\'{e}el order trigger spontaneous oscillations at frequencies between the acoustic…
Electron-magnon coupling at the interface between a normal metal and a magnetically ordered insulator modifies the electrical conductivity of the normal metal, an effect known as spin-Hall magnetoresistance. It can also facilitate…
Spin-transfer is a typical spintronics effect that allows a ferromagnetic layer to be switched by spin-injection. Most of the experimental results about spin transfer are described on the basis of the Landau-Lifshitz-Gilbert equation of the…
We study the stationary state of Hall devices composed of a load circuit connected to the lateral edges of a Hall-bar. We follow the approach developed in a previous work (Creff et al. J. Appl. Phys 2020) in which the stationary state of a…
Spin-polarized current effect is studied on the static and dynamic magnetization of the antiferromagnet in a ferromagnet - antiferromagnet nanojunction. The macrospin approximation is generalized to antiferromagnets. Canted…
Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of…
With recent advances in simulating quantum phenomena in cold atoms, the higher-rank spin tensor Hall effect was discovered in larger spin systems with spin-tensor-momentum coupling, which is an extension of the celebrated spin Hall effects…
As a relativistic quantum mechanical effect, it is shown that the electric field exerting a transverse force on an electron spin 1/2 only if the electron is moving and the spin is polarized along the electric field. The spin force, analogue…
Equilibrium spin-current is calculated in a quasi-two-dimensional electron gas with finite thickness under in-plane magnetic field and in the presence of Rashba- and Dresselhaus spin-orbit interactions. The transverse confinement is modeled…
It is proposed that when a charge current circulates in a paramagnetic metal a transverse spin imbalance will be generated, giving rise to a 'spin Hall voltage'. Similarly, that when a spin current circulates a transverse charge imbalance…
We calculate spin Hall conductivities in the two dimensional electron systems with Rashba spin-orbit interaction. The salient feature is that, apart from the usual spin-Hall conductivity \sigma^z_{xy} which corresponds to the induction of…
The critical current of the spin transfer torque-driven magnetization dynamics was studied by taking into account both spin pumping and the finite penetration depth of the transverse spin current. We successfully reproduced the recent…
A useful experimental signature of the ordinary spin Hall effect is the spin accumulation it produces at the sample edges. The superspin Hall current [Phys. Rev. B 96, 094512 (2017)] is a transverse equilibrium spin current which is induced…
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that…
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
The main objective of this work is to investigate theoretically how tilting of an easy axis of a single-molecule magnet (SMM) from the orientation collinear with magnetic moments of the leads affects the switching process induced by current…
An effect is considered of alternating (high-frequency) current on the spin-valve type magnetic junction configuration. The stability with respect to small fluctuations is investigated in the macrospin approximation. When the current…