中文
相关论文

相关论文: Field-effect diode based on electron-induced Mott …

200 篇论文

The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…

凝聚态物理 · 物理学 2009-11-10 Arata Tanaka

Insulator to metal (IMT) transition (T$_t$ $\sim$ 341 K) in the VO2 accompanies transition from an infrared (IR) transparent to IR opaque phase. Tailoring of the IMT and associated IR switching behavior can offer potential thermochromic…

材料科学 · 物理学 2020-01-22 S. S. Majid , S. R. Sahu , A. Ahad , K. Dey , K. Gautam , F. Rahman , P. Behera , U. Deshpande , V. G. Sathe , D. K. Shukla

We use a combination of optical spectra, first principles calculations, and energy dependent magneto-optical measurements to elucidate the electronic structure and to study the phase diagram of Ni$_3$V$_2$O$_8$. We find a remarkable…

强关联电子 · 物理学 2007-05-23 R. C. Rai , J. Cao , S. Brown , J. L. Musfeldt , D. Kasinathan , D. J. Singh , G. Lawes , N. Rogado , R. J. Cava , X. Wei

Employing Nernst-Einstein decomposition $\sigma=e^2\chi_c D$ of the conductivity $\sigma$ onto charge susceptibility (compressibility) $\chi_c$ and diffusion constant $D$, we argue that the bad-metallic behavior of $\sigma$ in the regime of…

强关联电子 · 物理学 2017-02-01 Jure Kokalj

We consider an interaction-driven scenario for the two-dimensional metal-insulator transition in zero magnetic field (2D-MIT), based on melting the Wigner crystal through vacancy-interstitial pair formation. We show that the transition from…

强关联电子 · 物理学 2008-03-07 S. Pankov , V. Dobrosavljevic

By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($\sigma$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times…

介观与纳米尺度物理 · 物理学 2009-07-21 L. A. Tracy , E. H. Hwang , K. Eng , G. A. Ten Eyck , E. P. Nordberg , K. Childs , M. S. Carroll , M. P. Lilly , S. Das Sarma

We present multi-scale dynamical simulations of voltage-induced insulator-to-metal transition in the double exchange model, a canonical example of itinerant magnet and correlated electron systems. By combining nonequilibrium Green's…

介观与纳米尺度物理 · 物理学 2023-03-21 Gia-Wei Chern

We have analyzed spectral weight changes in the conduction and the valence band across insulator to metal transition (IMT) in the VO2 thin film using X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (PES). Through…

强关联电子 · 物理学 2019-07-31 S. S. Majid , K. Gautam , A. Ahad , F. Rahman , R. J. Choudhary , Frank M. F. De Groot , D. K. Shukla

We theoretically study pump-photon-energy-dependent pathways of a photoinduced dimer-Mott-insulator-to-metal transition, on the basis of numerical solutions to the time-dependent Schr\"odinger equation for the exact many-body wave function…

强关联电子 · 物理学 2015-05-28 Kenji Yonemitsu , Satoshi Miyashita , Nobuya Maeshima

The electronic structure of the vanadium dioxide VO_2 in the tetragonal R and two monocinic M_1 and M_2 structural modifications was calculated in frames of the local-density functional (LDA) approach and the LSDA + U formalism of…

强关联电子 · 物理学 2007-05-23 M. A. Korotin , N. A. Skorikov , V. I. Anisimov

Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…

We present a general framework to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The theory correctly describes detailed experimental features of the conductivity and of the…

强关联电子 · 物理学 2008-02-02 Michael Arnold , Johann Kroha

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of…

The temperature dependence of the local structure of V_2O_3 in the vicinity of the metal to insulator transition (MIT) has been investigated using hard X-ray absorption spectroscopy. It is shown that the vanadium pair distance along the…

强关联电子 · 物理学 2009-11-11 P. Pfalzer , G. Obermeier , M. Klemm , S. Horn , M. L. denBoer

In two-dimensional (2D) van der Waals (vdW) layered materials the application of pressure often induces a giant lattice collapse, which can subsequently drive an associated Mott transition. Here, we investigate room-temperature…

Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…

We study a bandwidth controlled Mott metal-insulator transition (MIT) between a Fermi liquid metal and a quantum spin-liquid insulator at half-filling in three dimensions (3D). Using a slave rotor approach, and incorporating gauge field…

强关联电子 · 物理学 2013-05-29 Daniel Podolsky , Arun Paramekanti , Yong Baek Kim , T. Senthil

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the…

超导电性 · 物理学 2016-08-31 Xiaoxiang Xi , Helmuth Berger , László Forró , Jie Shan , Kin Fai Mak

The magnetic field-induced superconductor-insulator-metal transition (SIMT) in partially deuterated $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br, which is just on the Mott boundary, has been observed using the infrared magneto-optical imaging…

To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical…

介观与纳米尺度物理 · 物理学 2016-06-15 Ting Chen , K. V. Reich , Nicolaas J. Kramer , Han Fu , Uwe R. Kortshagen , B. I. Shklovskii
‹ 上一页 1 8 9 10 下一页 ›