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相关论文: Infrared spectroscopy of hole doped ABA-stacked tr…

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We study the Landau level spectrum of ABA- and ABC-stacked trilayer graphene. We derive analytic low energy expressions for the spectrum, the validity of which is confirmed by comparison to a \pi -band tight-binding calculation of the…

介观与纳米尺度物理 · 物理学 2011-10-04 Shengjun Yuan , Rafael Roldán , Mikhail I. Katsnelson

The generalized tight-binding model is developed to investigate the feature-rich magneto-optical properties of AAB-stacked trilayer graphene. Three intragroup and six intergroup inter-Landau-level (inter-LL) optical excitations largely…

计算物理 · 物理学 2015-09-21 Thi-Nga Do , Po-Hsin Shih , Cheng-Pong Chang , Chiun-Yan Lin , Ming-Fa Lin

The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of…

Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one…

介观与纳米尺度物理 · 物理学 2012-09-25 Pooja Rani , V. K. Jindal

Optical properties of graphene are explored by using the generalized tight-binding model. The main features of spectral structures, the form, frequency, number and intensity, are greatly enriched by the complex relationship among the…

计算物理 · 物理学 2016-07-20 Chiun-Yan Lin , Thi-Nga Do , Yao-Kung Huang , Ming-Fa Lin

Using highly efficient GPU-based simulations of the tight-binding Bogoliubov-de Gennes equations we solve self-consistently for the pair correlation in rhombohedral (ABC) and Bernal (ABA) multilayer graphene by considering a finite…

超导电性 · 物理学 2015-06-12 W. A. Munoz , L. Covaci , F. M. Peeters

A systematic review is made for the AA-, AB- and ABC-stacked graphites. The generalized tight-binding model, accompanied with the effective-mass approximation and the Kubo formula, is developed to investigate electronic and optical…

介观与纳米尺度物理 · 物理学 2017-05-09 Chiun-Yan Lin , Rong-Bin Chen , Yen-Hung Ho , Ming-Fa Lin

The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic…

介观与纳米尺度物理 · 物理学 2012-08-07 Lan Meng , Wei Yan , Zhao-Dong Chu , Yanfeng Zhang , Lei Feng , Rui-Fen Dou , Jia-Cai Nie , Lin He

We analyze the spectroscopic features of bilayer graphene determined by the formation of pairs of low-energy and split bands in this material. We show that the inter-Landau-level absorption spectrum in bilayer graphene at high magnetic…

介观与纳米尺度物理 · 物理学 2007-05-23 D. S. L. Abergel , Vladimir I. Fal'ko

We present an experimental study of the infrared conductivity, transmission, and reflection of a gated bilayer graphene and their theoretical analysis within the Slonczewski-Weiss-McClure (SWMc) model. The infrared response is shown to be…

介观与纳米尺度物理 · 物理学 2008-12-04 L. M. Zhang , Z. Q. Li , D. N. Basov , M. M. Fogler , Z. Hao , M. C. Martin

Twisted van der Waals materials provide a tunable platform for investigating two-dimensional superconductivity and quantum phases. Using spectra-imaging scanning tunneling microscopy, we study the superconducting states in twisted bilayer…

Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The feature, lying at ~1580 cm-1, changes strongly with electrostatic gating.…

介观与纳米尺度物理 · 物理学 2013-05-03 Chun Hung Lui , Emmanuele Cappelluti , Zhiqiang Li , Tony F. Heinz

A density-matrix formalism within the length gauge is developed to calculate the nonlinear response of both doped and undoped biased bilayer graphene (BBLG) at terahertz frequencies. Employing a tight-binding model, we derive an effective…

介观与纳米尺度物理 · 物理学 2017-08-09 Riley McGouran , Marc M. Dignam

We describe the gated bilayer graphene system when it is subjected to intense terahertz frequency electromagnetic radiation. We examine the electron band structure and density of states via exact diagonalization methods within Floquet…

介观与纳米尺度物理 · 物理学 2015-05-20 D. S. L. Abergel , Tapash Chakraborty

Twisted bilayer graphene (tBLG) devices with ion gel gate dielectrics are studied using Raman spectroscopy in the twist angle regime where a resonantly enhanced G band can be observed. We observe prominent splitting and intensity quenching…

介观与纳米尺度物理 · 物理学 2015-02-18 Ting-Fung Chung , Rui He , Tai-Lung Wu , Yong P. Chen

We report on the existence of water-gated charge doping of graphene deposited on atomically flat mica substrates. Molecular films of water in units of ~0.4 nm-thick bilayers were found to be present in regions of the interface of…

材料科学 · 物理学 2021-07-16 Jihye Shim , Chun Hung Lui , Taeg Yeoung Ko , Young-Jun Yu , Philip Kim , Tony F. Heinz , Sunmin Ryu

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to…

介观与纳米尺度物理 · 物理学 2012-02-21 Chun Hung Lui , Zhiqiang Li , Kin Fai Mak , Emmanuele Cappelluti , Tony F. Heinz

The tight-binding model is closely associated with the modified layer-based random-phase approximation to thoroughly investigate the electron-electron interactions in sliding bilayer graphene. The Coulomb interactions and intralayer and…

介观与纳米尺度物理 · 物理学 2023-03-13 Chiun-Yan Lin , Ming-Fa Lin

The single-band current-dipole Kubo formula for the dynamical conductivity of heavily doped graphene from Kup\v{c}i\'{c} [Phys. Rev. B 91, 205428 (2015)] is extended to a two-band model for conduction $\pi$ electrons in lightly doped…

介观与纳米尺度物理 · 物理学 2016-08-25 I. Kupčić , G. Nikšić , Z. Rukelj , D. Pelc

The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…

介观与纳米尺度物理 · 物理学 2015-05-13 L. A. Falkovsky