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Accurate and simple local strain assessment in graphene is one of the crucial tasks in device characterization. Raman spectroscopy is often used for that purpose through monitoring of the G and 2D modes. However, the shifts of those two…

材料科学 · 物理学 2018-04-27 Elena del Corro , Ladislav Kavan , Martin Kalbac , Otakar Frank

This review presents the state of the art in strain and ripple-induced effects on the electronic and optical properties of graphene. It starts by providing the crystallographic description of mechanical deformations, as well as the…

介观与纳米尺度物理 · 物理学 2017-08-22 Gerardo G. Naumis , Salvador Barraza-Lopez , Maurice Oliva-Leyva , Humberto Terrones

Raman spectroscopy is a powerful tool for characterizing the local properties of graphene. Here, we introduce a method for evaluating unknown strain configurations and simultaneous doping. It relies on separating the effects of hydrostatic…

Since lattice strain and charge density affect various material properties of graphene, a reliable and efficient method is required for quantification of the two variables. While Raman spectroscopy is sensitive and non-destructive, its…

介观与纳米尺度物理 · 物理学 2020-08-10 Gwanghyen Ahn , Sunmin Ryu

Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a…

介观与纳米尺度物理 · 物理学 2017-01-30 Dominik Metten , Guillaume Froehlicher , Stéphane Berciaud

Due to their unique dimensionality, the physical properties of two-dimensional materials are deeply impacted by their surroundings, calling for a thorough understanding and control of these effects. We investigated the influence of the…

Graphene is a mechanically robust 2D material promising for flexible optoelectronic applications. However, its electromagnetic properties under strain are experimentally poorly understood. Here we present the far-infrared transmission…

介观与纳米尺度物理 · 物理学 2017-05-22 Manisha Chhikara , Iaroslav Gaponenko , Patrycja Paruch , Alexey. B. Kuzmenko

Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to…

There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches…

Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile…

介观与纳米尺度物理 · 物理学 2022-06-06 Paul Froeter , Parsian Moseni , Apratim Khandelwal , Xiuling Li

Among the different strategies used to induce the opening of a band gap in graphene, one common practice is through chemical doping. While a gap may me opened in this way, disorder-induced scattering is an unwanted side-effect that impacts…

介观与纳米尺度物理 · 物理学 2016-06-22 James A Lawlor , Claudia G Rocha , Vanessa Torres , Andrea Latgé , Mauro Ferreira

The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of…

Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotropic absorption add an appealing functionality to graphene,…

介观与纳米尺度物理 · 物理学 2013-12-31 Guang-Xin Ni , Hong-Zhi Yang , Wei Ji , Seung-Jae Baeck , Chee-Tat Toh , Jong-Hyun Ahn , Vitor M. Pereira , Barbaros Özyilmaz

Avoiding charge density variations and impurities in graphene is vital for high-quality graphene-based devices. Here, we demonstrate an optical method using Raman 2D peak-split to monitor charge density variations in the range 1-25e10 cm-2.…

应用物理 · 物理学 2020-05-12 Zhuofa Chen , Nathan Ullberg , Mounika Vutukuru , David Barton , Anna K Swan

Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high energy electron diffraction experiments with first-principles calculations, we show that large…

材料科学 · 物理学 2013-09-03 Nils Blanc , Fabien Jean , Arkady V. Krasheninnikov , Gilles Renaud , Johann Coraux

Recently, the strain engineering of two-dimensional materials such as graphene has attracted considerable attention for its great potential in functional nanodevices. Here, we theoretically and experimentally investigate the strain…

光学 · 物理学 2015-11-03 Fei Xu , Jin-hui Chen , Yan-qing Lu

Graphene is known as the strongest 2D material in nature, yet we show that moderate charge doping of either electrons or holes can further enhance its ideal strength by up to ~17%, based on first principles calculations. This unusual…

材料科学 · 物理学 2015-06-11 Chen Si , Wenhui Duan , Zheng Liu , Feng Liu

Understanding how water wets graphene is critical for predicting and controlling its behaviour in nanofluidic, sensing, and energy applications. A key measure of wetting is the contact angle made by a liquid droplet against the surface, yet…

介观与纳米尺度物理 · 物理学 2026-05-04 Darren Wayne Lim , Xavier R. Advincula , William C. Witt , Angelos Michaelides , Fabian L. Thiemann , Christoph Schran

While the mechanical distortions change the electronic properties of graphene significantly, the effects of electronic manipulation on its mechanical properties have not been known. Using first-principles calculation methods, we show that,…

材料科学 · 物理学 2013-02-20 S. J. Woo , Young-Woo Son

We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, even in the absence of intentional doping. Doping…

材料科学 · 物理学 2008-01-07 C. Casiraghi , S. Pisana , K. S. Novoselov , A. K. Geim , A. C. Ferrari
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