相关论文: Giant Goos-H\"{a}nchen Shift in Graphene Double-ba…

Graphene oxide (GO) flakes have been deposited to bridge the gap between two epitaxial graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers (SB) at the graphene/graphene…

Graphene is the first example of truly two-dimensional crystals - it's just one layer of carbon atoms. It turns out to be a gapless semiconductor with unique electronic properties resulting from the fact that charge carriers in graphene…

Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of…

Mechanism of transient population inversion in graphene with multi-splitted (interdigitated) top-gate and grounded back gate is suggested and examined for the mid-infrared (mid-IR) spectral region. Efficient stimulated emission after fast…

The problem of the Klein tunneling across a potential barrier in bi-layer graphene is addressed. The electron wave functions are treated as massive chiral particles. This treatment allows us to compute the statistical complexity and…

Angle disorder is an intrinsic feature of twisted bilayer graphene and other moir\'e materials. Here, we discuss electron transport in twisted bilayer graphene in the presence of angle disorder. We compute the local density of states and…

The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while…

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic…

In view of the many quantum field theoretical descriptions of graphene in $2+1$ dimensions, we present another field theoretical feature of graphene, in the presence of defects. Particularly, we shall be interested in gapped graphene in the…

It is well-known that the variations of Goos-H\"anchen shifts (GHSs) are closely associated with the enengy-flux provided by evanescent states in the case of total internal reflection. However, when the frustrated internal total reflection…

Because of its large Fermi velocity, leading to a great mobility, graphene is expected to play an important role in (small signal) radio frequency electronics. Among other, graphene devices based on Klein tunneling phenomena are already…

Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $\theta$ of the h-BN with respect to the graphene layers with different physical…

The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to…

We investigate the lateral displacement of electronic waves when partially and totally reflected by a quaternionic potential. Following the analogy between Quantum Mechanics and Optics we introduce a refractive index for the complex and the…

Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of…

The electronic transport properties of graphene-based superlattice structures are investigated. A graphene-based modulation-doped superlattice structure geometry is proposed and consist of periodically arranged alternate layers:…

In this Letter, we derive an effective theory of graphene on a hexagonal Boron Nitride (h-BN) substrate. We show that the h-BN substrate generically opens a spectral gap in graphene despite the lattice mismatch. The origin of that gap is…

We propose two schemes of field-effect transistor based on gapped armchair graphene nanoribbons connected to metal leads, by introducing sidearms or on-site gate voltages. We make use of the band gap to reach excellent switch-off character.…

We present the first principle calculations of the electrical properties of graphene sheet/h-BN heterojunction(GS/h-BN) and 11-armchair graphene nanoribbon heterojunction(11-AGNR/h-BN), which were carried out using the density functional…

Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great…