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相关论文: Strain-induced stabilization of Al functionalizati…

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Two-dimensional alloys of carbon and nitrogen represent an urgent interest due to prospective applications in nanomechanical and optoelectronic devices. Stability of these chemical structures must be understood as a function of their…

材料科学 · 物理学 2015-02-09 Vitaly V. Chaban , Oleg V. Prezhdo

Graphene oxide (GO) is one of chemically modified graphenes and has been extensively investigated worldwide. A monolayer sheet of GO can be chemically produced in solution and it has been expected to be adaptable to a wide variety of…

材料科学 · 物理学 2011-02-11 Yoshio Kanamori , Seiji Obata , Koichiro Saiki

Strain effects on the stability, electronic structure, and hydrogen storage capacity of lithium-doped graphane (CHLi) have been investigated by stateof-the art first principle density functional theory (DFT). Molecular dynamics MD)…

材料科学 · 物理学 2015-06-05 Tanveer Hussain , Abir De Sarkar , Rajeev Ahuja

Pristine graphene interacts relatively weakly with Al, which is a specie of importance for novel generations of metal-ion batteries. We employ DFT calculations to explore the possibility of enhancing Al interaction with graphene. We…

材料科学 · 物理学 2021-06-23 Jovana Vlahović , Ana S. Dobrota , Natalia V. Skorodumova , Igor A. Pašti

Energy storage devices with liquid_metal electrodes have attracted interest in recent years due to their potential for mechanical resilience, self_healing, dendrite_free operation, and fast reaction kinetics. Gallium alloys like Eutectic…

系统与控制 · 电气工程与系统科学 2025-01-28 Afsaneh L. Sanati , Timur Nikitin , Rui Fausto , Carmel Majidi , Mahmoud Tavakoli

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…

The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire…

The thermal stability of nanocrystalline (nc) Al has been studied by means of positron lifetime spectroscopy and X-ray diffraction (XRD), prepared by compacting nanoparticles under high pressures. Those nanoparticles were produced by the…

材料科学 · 物理学 2015-02-06 Xian-Bao Song , Zhu Wang , Peng-Fei Tai , Feng-Shou Tian , Liang-Liang Liu

For carbon-based materials, in contrast to metal surfaces, the relationship between strain and reactivity is not yet established, even though there are literature reports on strained graphene. Knowledge of such relationships would be…

A promising material for hydrogen storage at room temperature-Al doped graphene was proposed theoretically by using density functional theory calculation. Hydrogen storage capacity of 5.13 wt% was predicted at T = 300 K and P = 0.1 Gpa with…

材料科学 · 物理学 2009-11-13 Z. M. Ao , Q. Jiang , R. Q. Zhang , T. T. Tan , S. Li

The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution…

介观与纳米尺度物理 · 物理学 2011-11-16 F. Furtmayr , J. Teubert , P. Becker , S. Conesa-Boj , J. R. Morante , J. Arbiol , A. Chernikov , S. Schäfer , S. Chatterjee , M. Eickhoff

Methane, the primary constituent of natural gas, binds too weakly to nanostructured carbons to meet the targets set for on-board vehicular storage to be viable. We show, using density functional theory calculations, that replacing graphene…

材料科学 · 物理学 2015-10-01 Rajiv K. Chouhan , Kanchan Ulman , Shobhana Narasimhan

Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated…

We develop a simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (GO) sheets through thermal annealing of GO in ammonia. X-ray photoelectron spectroscopy (XPS) study of GO sheets annealed at various reaction…

材料科学 · 物理学 2009-10-07 Xiaolin Li , Hailiang Wang , Joshua T. Robinson , Hernan Sanchez , Georgi Diankov , Hongjie Dai

Graphene oxide finds applications in different fields of science, including energy conversion. Electrochemical reduction of graphene oxide (GO) significantly improves its conductivity. However, the kinetics of this process depends on the…

In this research, the ambient cured one part alkali activated material (AAM) containing graphene nanoplatelets (GNPs), fly ash, slag and silica fume has been investigated after high temperature exposure to 200 to 800oC. Their compressive…

材料科学 · 物理学 2024-02-22 Nghia Tran , Tuan Nguyen , Jay Black , Tuan Ngo

The allure of all carbon electronics stems from the spread in physical properties, across all its allotropes. The scheme also harbours unique challenges, like tunability of band-gap, variability of doping and defect control. Here, we…

介观与纳米尺度物理 · 物理学 2021-12-30 Arijit Kayal , Harikrishnan Gopalakrishnan , Kingshuk Bandopadhyay , Amit Kumar , S. Ravi P. Silva , J. Mitra

We present a novel comprehensive first-principles theoretical study of the electronic properties and relative stabilities of edge-oxidized zigzag graphene nanoribbons. The oxidation schemes considered include hydroxyl, carboxyl, ether, and…

材料科学 · 物理学 2015-05-13 Oded Hod , Veronica Barone , Juan E. Peralta , Gustavo E. Scuseria

Mechanical failure of an ideal crystal is dictated either by an elastic instability or a soft-mode instability. We show that the ideal strength measurement of graphene based on nano-indentation experiments \cite{lee2008measurement,…

材料科学 · 物理学 2014-09-23 Sandeep Kumar , David M. Parks

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing…

介观与纳米尺度物理 · 物理学 2015-05-30 Michele Esposto , Sriram Krishnamoorthy , Digbijoy N. Nath , Sanyam Bajaj , Ting-Hsiang Hung , Siddharth Rajan
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