相关论文: Time-Space Constrained Codes for Phase-Change Memo…

Phase-change materials (PCMs) are the subject of considerable interest because they have been recognized as potential active layers for next-generation non-volatile memory devices, known as Phase Change Random Access Memories (PRAMs). By…

We present code constructions for masking $u$ partially stuck memory cells with $q$ levels and correcting additional random errors. The results are achieved by combining the methods for masking and error correction for stuck cells in [1]…

The pivotal storage density win achieved by solid-state devices over magnetic devices recently is a result of multiple innovations in physics, architecture, and signal processing. Constrained coding is used in Flash devices to increase…

PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of…

Reducing the threshold voltage of electronic devices increases their sensitivity to electromagnetic radiation dramatically, increasing the probability of changing the memory cells' content. Designers mitigate failures using techniques such…

A write-once memory (wom) is a storage medium formed by a number of ``write-once'' bit positions (wits), where each wit initially is in a `0' state and can be changed to a `1' state irreversibly. Examples of write-once memories include SLC…

Polar codes with memory (PCM) are proposed in this paper: a pair of consecutive code blocks containing a controlled number of mutual information bits. The shared mutual information bits of the succeeded block can help the failed block to…

While Landauer's Principle sets a lower bound for the work required for a computation, that work is recoverable for efficient computations. However, practical physical computers, such as modern digital computers or biochemical systems, are…

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…

We address the problem of multipermutation code design in the Ulam metric for novel storage applications. Multipermutation codes are suitable for flash memory where cell charges may share the same rank. Changes in the charges of cells…

The pivotal storage density win achieved by solid-state devices over magnetic devices in 2015 is a result of multiple innovations in physics, architecture, and signal processing. One of the most important innovations in that regard is…

This paper presents a unified optimization framework for phase change material (PCM) based cooling systems. Thermal management is critical in applications such as photovoltaic (PV) modules, battery packs, and power electronics, where…

We study error-correcting codes for permutations under the infinity norm, motivated by a novel storage scheme for flash memories call rank modulation. In this scheme, a set of $n$ flash cells are combined to create a single virtual…

Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable non-volatile memory technology which utilizes the large resistivity contrast between the amorphous and crystalline phases of chalcogenide…

Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…

Observations of the CMB today allow us to answer detailed questions about the properties of our Universe, targeting both standard and non-standard physics. In this paper, we study the effects of varying fundamental constants (i.e., the…

Quantum-accurate computer simulations play a central role in understanding phase-change materials (PCMs) for advanced memory technologies. However, direct quantum-mechanical simulations are necessarily limited to simplified models,…

In this work, we study a new model of defect memory cells, called partially stuck-at memory cells, which is motivated by the behavior of multi-level cells in non-volatile memories such as flash memories and phase change memories. If a cell…

We studied the role of fundamental constants in an updated recombination scenario, focusing on the time variation of the fine structure constant \alpha and the electron mass m_e in the early Universe. Using CMB data including WMAP 5-yr…

Motivated by the rank modulation scheme, a recent work by Sala and Dolecek explored the study of constraint codes for permutations. The constraint studied by them is inherited by the inter-cell interference phenomenon in flash memories,…