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Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a…

The two-dimensional electron gas (2DEG) at the LaAlO$_3$/SrTiO$_3$ interface exhibits gate tunable superconductivity with a domelike shape of $T_{\rm{C}}$ as a function of electron concentration. Here, we propose that the experimentally…

The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental…

The interface between the insulating oxides LaAlO3 and SrTiO3 exhibits a superconducting two-dimensional electron system that can be modulated by a gate voltage. While gating of the conductivity has been probed extensively and gating of the…

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the…

Using density functional theory calculations, we establish that the half-metallicity of bulk Ba2FeReO6 survives down to 1 nm thickness in BaTiO3/Ba2FeReO6/BaTiO3 heterostructures grown along the (001) and (111) directions. The confinement…

The high-frequency conductivity of Si delta-doped GaAs/AlGaAs heterostructures is studied in the integer quantum Hall effect (QHE) regime, using acoustic methods. Both the real and the imaginary parts of the complex conductivity are…

The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional…

The interface between the insulators LaAlO$_3$ and SrTiO$_3$ accommodates a two-dimensional electron liquid (2DEL) -- a high mobility electron system exhibiting superconductivity as well as indications of magnetism and correlations. While…

In multiband superconductivity, the case where the single electron hopping between different Fermi surface spots of different symmetry is forbidden by selection rules is recently attracting a large interest. The focus is addressed to…

In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We…

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both…

Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap…

Two-dimensional election gases (2DEG), arising due to quantum confinement at interfaces between transparent conducting oxides, have received tremendous attention in view of electronic applications. The challenge is to find a material system…

Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of…

Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential…

The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic…

Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric…

Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically…

The advent of magnetic two-dimensional electron gases (2DEGs) at oxide interfaces has provided new opportunities in the field of spintronics. The enhancement of magnetism in 2DEGs at oxide interfaces continues to be a significant challenge,…