相关论文: Transfer-free Grown Bilayer Graphene Transistors f…
In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all…
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…
We report the synthesis of AB-stacked multilayer graphene via ambient pressure chemical vapor deposition on Cu foils, and demonstrate a method to construct suspended multilayer graphene devices. In four-terminal geometry, such devices were…
Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with…
Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent films but is good mainly for research. Graphene grown on…
The optical conductivities of graphene layers are strongly dependent on their stacking orders. Our first-principle calculations show that while the optical conductivities of single layer graphene (SLG) and bilayer graphene (BLG) with Bernal…
Present study provides a comprehensive theoretical analysis of the superconducting phase in selected lithium-decorated bilayer graphene nanostructures. The numerical calculations, conducted within the Eliashberg formalism, give quantitative…
Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed…
In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to…
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we…
An interlayer distance modulation in twisted bilayer graphene is reported. This is achieved by an in-situ annealing technique. The transformation of systematic vacuum and hydrogen annealing effects in twisted bilayer CVD graphene on SiO2…
Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes,…
Electronic properties of bilayer graphene are distinct from both the conventional two dimensional electron gas and monolayer graphene due to its particular chiral properties and excitation charge carrier dispersions. We study the effect of…
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…
We report the superconductivity in Ca-intercalated bilayer graphene C$_6$CaC$_6$, the thinnest limit of Ca graphite intercalation compound. We performed \textit{in situ} electrical transport measurements on pristine bilayer graphene,…
One popular approach to prepare graphene is to grow them on transition metal substrates via chemical vapor deposition. By using the density functional theory with dispersion correction, we systematically investigate for the first time the…
We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…
Vertical graphene nanosheets (VGNs) are the material of choice for next-generation electronic device applications. The growing demand for flexible devices in electronic industry brings in restriction on growth temperature of the material of…
We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external…
Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and…