相关论文: Boundary Scattering in Ballistic Graphene
Motivated by recent low-temperature magnetoresistance measurements in twisted bilayer graphene aligned with hexagonal Boron Nitride substrate, we perform a systematic study of possible symmetry breaking orders in this device at a filling of…
We study the the transport properties of multiterminal ballistic graphene samples, concentrating on the conductance matrix, fluctuations and cross-correlations. Far away from Dirac point, the current is carried mostly by propagating modes…
We study the dynamics of carriers in graphene subjected to an inhomogeneous magnetic field. For a magnetic field with an hyperbolic profile the corresponding Dirac equation can be analyzed within the formalism of supersymmetric quantum…
We study the 4-probe bend conductance $G_{14,32}$ of a mesoscopic crossed wire structure in the ballistic regime in the absence of a magnetic field, which for normal devices is usually negative. We predict that for sufficiently large…
The magnetoplasmon spectrum of Landau level transitions in hexagonal boron nitride-encapsulated graphene is explored via infrared transmission magnetospectroscopy, as a function of the filling factor at fixed magnetic field. As the lowest…
We study the infrared cyclotron resonance of high mobility monolayer graphene encapsulated in hexagonal boron nitride, and simultaneously observe several narrow resonance lines due to interband Landau level transitions. By holding the…
We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with…
As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…
We have studied the magnetotransport of conical and disk-shaped nanocarbon particles in magnetic fields $\left|B\right|\leq9\:\mathrm{T}$ at temperatures $2\leq T\leq300\:\mathrm{K}$ to characterize electron scattering in a three…
The magnetoconductance of graphene nanoribbons with rough zigzag and armchair edges is studied by numerical simulations. nanoribbons with sufficiently small bulk disorder show a pronounced magnetoconductance minimum at cyclotron radii close…
The electrical resistivity for a current moving perpendicular to layers (chains) in quasi-2D (quasi-1D) metals under an applied magnetic field of varying orientation is studied using Boltzmann transport theory. We consider the simplest…
We investigate the size scaling of the conductance of surface disordered graphene sheets of width W and length L. Metallic leads are attached to the sample ends across its width. At E ~ 0, the conductance scales with the system size as…
The graphene is a native two-dimensional crystal material consisting of a single sheet of carbon atoms. In this unique one-atom-thick material, the electron transport is ballistic and is described by a quantum relativistic-like Dirac…
We present magnetoresistance measurements on large scale monolayer graphene grown by chemical vapor deposition (CVD) on copper. The graphene layer was transferred onto SiO2/Si via PMMA and thermal release tape for transport measurements.…
The dynamical approach is applied to ballistic transport in mesoscopic graphene samples of length L and contact potential U. At times shorter than both relevant time scales, the flight time and \hslash/U, the major effect of the electric…
Graphene has shown impressive properties for nanoelectronics applications including a high mobility and a width-dependent bandgap. Use of graphene in nanoelectronics would most likey be in the form of graphene nanoribbons (GNRs) where the…
We theoretically investigate the transport and magnetotransport properties of three-dimensional Weyl semimetals. Using the RPA-Boltzmann transport scattering theory for electrons scattering off randomly distributed charged impurities,…
Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substrates in modern industry, designing two-dimensional…
Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry…
We investigate conductance fluctuations as a function of carrier density $n$ and magnetic field in diffusive mesoscopic samples made from monolayer and bilayer graphene. We show that the fluctuations' correlation energy and field, which are…