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Basic mechanisms controlling orbital order and orbital fluctuations in transition metal oxides are discussed. The lattice driven classical orbital picture, e.g. like in manganites LaMnO$_3$, is contrasted to the quantum behavior of orbitals…

强关联电子 · 物理学 2009-11-11 Giniyat Khaliullin

We study a two-dimensional single band Hubbard Hamiltonian with antisymmetric spin-orbit coupling. We argue that this is the minimal model to understand the electronic properties of locally non-centrosymmetric transition-metal (TM) oxides…

强关联电子 · 物理学 2021-04-30 Mehdi Biderang , Alireza Akbari , Jesko Sirker

We summarize some characteristic features of the frustrated magnetic interactions in spin-orbital models adequate for cubic transition metal oxides with orbital degeneracy. A generic tendency towards dimerization, found already in the…

强关联电子 · 物理学 2015-06-24 Andrzej M. Oles

A spin-orbital superexchange Hamiltonian in a Mott insulator with $t_{2g}$ orbital degeneracy is investigated. More specifically, we focus on a spin ferromagnetic state of the model and study a collective behavior of orbital angular…

强关联电子 · 物理学 2009-11-11 G. Khaliullin , S. Okamoto

We present our theoretical results on the mechanism of two transitions in vanadium spinel oxides $A$V$_2$O$_4$ ($A$=Zn, Mg, or Cd) in which magnetic V cations constitute a geometrically-frustrated pyrochlore structure. We have derived an…

强关联电子 · 物理学 2007-05-23 Yukitoshi Motome , Hirokazu Tsunetsugu

We examine magnon and orbiton behavior in localized O$_2$ anti-bonding molecular $\pi^*$ orbitals using an effective Kugel-Khomskii Hamiltonian derived from a two band Hubbard model with hopping parameters taken from {\em ab initio} density…

强关联电子 · 物理学 2013-05-29 E. R. Ylvisaker , R. R. P. Singh , W. E. Pickett

The crossover from localized- to itinerant-electron behavior is associated with many intriguing phenomena in condensed-matter physics. In this paper, we investigate the crossover from localized to itinerant regimes in the spinel system…

We study the manganese oxides from the viewpoint of the strongly correlated doped Mott insulator. The magnetic ordering and the charge transport are governed by the orbital degrees of freedom, and their dimensionality is controlled by the…

强关联电子 · 物理学 2016-08-31 R. Maezono , S. Murakami , N. Nagaosa , S. Ishihara , M. Yamanaka , H. C. Lee

The two-orbital degenerate Hubbard model with distinct hopping integrals is studied by combining dynamical mean-field theory with quantum Monte Carlo simulations. The role of orbital fluctuations for the nature of the Mott transition is…

强关联电子 · 物理学 2009-11-11 Akihisa Koga , Norio Kawakami , T. M. Rice , Manfred Sigrist

Orbitally degenerate systems provide a promising platform for realizing novel quantum phases driven by spin-orbital exchange interactions, as described by the Kugel-Khomskii model. Spinel vanadates, in which orbital degrees of freedom…

强关联电子 · 物理学 2026-05-06 Hiroki Nakai , Yusuke Nomura

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO$_{2}$. We have used soft-x-ray absorption spectroscopy at the V $L_{2,3}$ edges as a sensitive local probe, and…

We use exact diagonalization combined with mean-field theory to investigate the phase diagram of the spin-orbital model for cubic vanadates. The spin-orbit coupling competes with Hund's exchange and triggers a novel phase, with the ordering…

强关联电子 · 物理学 2016-08-31 Peter Horsch , Giniyat Khaliullin , Andrzej M. Oles

We investigate the highly frustrated spin and orbital superexchange interactions in cubic vanadates. The fluctuations of $t_{2g}$ orbitals trigger a {\it novel mechanism of ferromagnetic interactions} between spins S=1 of V$^{3+}$ ions…

强关联电子 · 物理学 2009-11-07 G. Khaliullin , P. Horsch , A. M. Oles

The collective behavior of correlated electrons in the VO$_2-$interface layer of LaVO$_3$/SrTiO$_3$ heterostructure is studied within a quarter-filled $t_{2g}$-orbital Hubbard model on a square lattice. We argue that the ground state is…

强关联电子 · 物理学 2008-11-21 G. Jackeli , G. Khaliullin

In the Mott insulating phase of the transition metal oxides, the effective orbital-orbital interaction is directional both in the orbital space and in the real space. We discuss a classical realization of directional coupling in two…

强关联电子 · 物理学 2009-11-10 Anup Mishra , Michael Ma , Fu-Chun Zhang , Siegfried Guertler , Lei-Han Tang , Shaolong Wan

The orbital-selective electronic behavior is one of the most remarkable manifestations of strong electronic correlations in multi-orbital systems. A prominent example is the orbital-selective Mott transition (OSMT), which is characterized…

强关联电子 · 物理学 2022-08-30 Evgeny A. Stepanov

The orbital degrees of freedom are of vital importance in explanation of various phenomena. Among them is the orbital-selective Mott transition (OSMT), which is thought to occur in several materials as Ca$_{2-x}$Sr$_x$RuO$_4$ and…

强关联电子 · 物理学 2015-11-24 E Plekhanov , A Avella , F Mancini , F P Mancini

The role of orbital ordering on metal-insulator transition of transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap on the orbital…

强关联电子 · 物理学 2007-09-25 Dong-Meng Chen , Liang-Jian Zou

We present the results of our theoretical study on the effects of geometrical frustration and the interplay between spin and orbital degrees of freedom in vanadium spinel oxides $A$V$_2$O$_4$ ($A$ = Zn, Mg or Cd). Introducing an effective…

强关联电子 · 物理学 2015-06-24 Yukitoshi Motome , Hirokazu Tsunetsugu

A short introduction to the complex phenomena encountered in transition metal oxides with either charge or orbital or joint charge-and-orbital order, usually accompanied by magnetic order, is presented. It is argued that all the types of…

强关联电子 · 物理学 2022-01-27 Andrzej M. Oles
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