相关论文: Change in Stacking Order and Lifshitz transition i…
The electronic band structure of ABC-stacked multilayer graphene is studied within an effective mass approximation. The electron and hole bands touching at zero energy support chiral quasiparticles characterized by Berry's phase N pi for…
We take a wide-angle view of the problem of monolayer graphene (MLG) where spin-degeneracy lifting is assumed to be possible by wedging in the tunable Rashba spin-orbit coupling(RSOC) and the sub-lattice staggered potential. We next…
It is shown theoretically that the renormalization of the electron energy spectrum of bilayer graphene with a strong high-frequency electromagnetic field (dressing field) results in the Lifshitz transition - the abrupt change in the…
The existence of strong trigonal warping around the K point for the low energy electronic states in multilayer (N$\geq$2) graphene films and graphite is well established. It is responsible for phenomena such as Lifshitz transitions and…
Bilayer graphene is a highly tunable material: not only can one tune the Fermi energy using standard gates, as in single-layer graphene, but the band structure can also be modified by external perturbations such as transverse electric…
In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with…
As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene…
Few layer graphene (FLG) has been recently intensively investigated for its variable electronic properties defined by a local atomic arrangement. While the most natural layers arrangement in FLG is ABA (Bernal) stacking, a metastable ABC…
Fermi surface topology plays an important role in determining the electronic properties of metals. In bulk metals, the Fermi energy is not easily tunable at the energy scale needed for reaching conditions for the Lifshitz transition - a…
Resolving low-energy features in the density of states (DOS) holds the key to understanding wide variety of rich novel phenomena in graphene based 2D heterostructures. Lifshitz transition in bilayer graphene (BLG) arising from trigonal…
Bernal-stacked tetralayer graphene (4LG) exhibits intriguing low-energy properties, featuring two massive subbands and showcasing diverse features of topologically distinct, anisotropic Fermi surfaces, including Lifshitz transitions and…
Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the…
The second-order nonlinear electrical response (NLER) is an intrinsic property of inversion symmetry-broken systems which can provide deep insights into the electronic band structures of atomically thin quantum materials. However, the…
We study the renormalization of the effective mass and trigonal warping of bilayer graphene by the electron-electron interaction. One consequence of such a renormalization in the low-energy bands of a bilayer crystal consists of a small…
Graphene multilayers exhibit electronic spectra that depend sensitively on both the number of layers and their stacking order. Beyond trilayer graphene, mixed stacking sequences (alternating Bernal and rhombohedral layers) give rise to…
Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of…
The effective theory for bilayer graphene (BLG), subject to parallel/in-plane magnetic fields, is derived. With a sizable magnetic field the trigonal warping becomes irrelevant, and one ends up with two Dirac points in the vicinity of each…
We investigate gated multilayer graphene with stacking order change along the armchair direction. We consider some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the…
We show that topology of the low-energy band structure in bilayer graphene critically depends on mechanical deformations of the crystal which may easily develop in suspended graphene flakes. We describe the Lifshitz transition that takes…
Recent studies have reported emergent ferroelectric behavior in twisted or moir\'e-engineered graphene-based van der Waals heterostructures, yet the microscopic origin of this effect remains under debate. Pristine mono- or few-layer…