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This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible…

Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve…

The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the…

Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. While passive cooling in graphene-based devices is quite effective due to graphene's extraordinary heat-conduction,…

介观与纳米尺度物理 · 物理学 2017-03-08 Junxi Duan , Xiaoming Wang , Xinyuan Lai , Guohong Li , Kenji Watanabe , Takashi Taniguchi , Mona Zebarjadi , Eva Y. Andrei

Thermally-tuning silicon micro-cavities are versatile and beneficial elements in low-cost large-scale photonic integrated circuits (PICs). Traditional metal heaters used for thermal tuning in silicon micro-cavities usually need a thick SiO2…

光学 · 物理学 2015-06-23 Longhai Yu , Yaocheng Shi , Daoxin Dai , Sailing He

We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to…

介观与纳米尺度物理 · 物理学 2013-02-22 Sharnali Islam , Zuanyi Li , Vincent E. Dorgan , Myung-Ho Bae , Eric Pop

High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m-1K-1) cooling substrates into the wide-bandgap semiconductor of…

材料科学 · 物理学 2024-01-25 Jing Wu , E Zhou , An Huang , Hongbin Zhang , Ming Hu , Guangzhao Qin

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

材料科学 · 物理学 2019-06-14 B. C. Worley , S. Kim , T. J. Ha , S. Park , R. Haws , P. Rossky , D. Akinwande , A. Dodabalapur

In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT…

We review the current state of the art of graphene-enhanced thermal interface materials for the management of heat the next generation of electronics. Increased integration densities, speed, and power of electronic and optoelectronic…

We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…

介观与纳米尺度物理 · 物理学 2015-06-03 Guanxiong Liu , Sergey Rumyantsev , Michael Shur , Alexander A. Balandin

The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequency applications. In this work, we present a unique…

Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa.…

介观与纳米尺度物理 · 物理学 2013-01-30 Amelia Barreiro , Felix Boerrnert , Mark H. Ruemmeli , Bernd Buechner , Lieven M. K. Vandersypen

Prior ultralow thermal conductivity materials are not suitable for thermoelectric applications due to the limited electronic transport in the materials. Here, we present a new class of ultralow thermal conductivity materials with…

材料科学 · 物理学 2018-06-27 Bin Huang , Weidong Zheng , Yee Kan Koh

The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution…

应用物理 · 物理学 2017-11-13 Hong Zhou , Kerry Maize , Jinhyun Noh , Ali Shakouri , Peide D. Ye

In this letter, we have demonstrated the possibility to efficiently relay the radiative heat flux between two nanoparticles by opening a smooth channel for heat transfer. By coating the nanoparticles with a silica shell and modifying the…

介观与纳米尺度物理 · 物理学 2019-12-30 Mingjian He , Hong Qi , Yatao Ren , Yijun Zhao , Mauro Antezza

Thermal energy storage using sensible heating of a solid storage medium is a potential low-cost technology for long-duration energy storage. To effectively get heat in and out of the solid material, channels of heat transfer fluid can be…

应用物理 · 物理学 2024-02-13 Shomik Verma , Colin Kelsall , Kyle Buznitsky , Alina LaPotin , Ashwin Sandeep , Asegun Henry

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…

We report on the first measurement of the thermal conductivity of a suspended single layer graphene. The measurements were performed using a non-contact optical technique. The near room-temperature values of the thermal conductivity in the…

材料科学 · 物理学 2008-03-15 A. A. Balandin , S. Ghosh , W. Bao , I. Calizo , D. Teweldebrhan , F. Miao , C. N. Lau

Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene…