相关论文: Study of amplified emission in polycrystalline ZnO…
We report on low temperature photoluminescence study of ZnO. The photoluminescence profile at 6K reveals FXA n=1, FXn=2A and FXn=1B peaks at 367.04 nm, 363.17 nm and 365.66 nm respectively together with neutral donor bound exciton D0 1XA at…
We report on low temperature photoluminescence (PL) and EPR study of bulk polycrystalline ZnO . Variation of peak position of donor bound exciton transition (D1XA) and FXAn=1-1LO with pump intensity show red shift and blue shift…
Metal nanoparticle (NP) surface coatings are known to significantly enhance the ultra-violet luminescence intensity of ZnO. Although there is general agreement that resonantly excited Localized Surface Plasmons (LSPs) in metal NPs can…
The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide…
The spectral--kinetic characteristics of a ZnO:Ga single crystal upon excitation in the vacuum UV region have been studied. At a temperature of 8 K, the exciton luminescence line peaking at 3.356 eV has an extremely small half-width (7.2…
A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained…
The coherent optical response from 140~nm and 65~nm thick ZnO epitaxial layers is studied using transient four-wave-mixing spectroscopy with picosecond temporal resolution. Resonant excitation of neutral donor-bound excitons results in…
We examine a mechanism by which excitons undergo ultrafast relaxation in common monolayer transition metal dichalcogenides. It is shown that at densities $\approx$ 1$\times$ 10$^{11}$ cm$^{-2}$ and temperatures $ \le 60$ K, excitons in well…
The evolution of charge carriers in photoexcited room temperature ZnO nanoparticles in solution is investigated using ultrafast ultraviolet photoluminescence spectroscopy, ultrafast Zn K-edge absorption spectroscopy and ab-initio molecular…
We have investigated the exciton dynamics in transition metal dichalcogenide mono-layers using time-resolved photoluminescence experiments performed with optimized time-resolution. For MoSe2 monolayers, we measure $\tau_{rad}=1.8\pm0.2$ ps…
Brillouin spectroscopic measurements have been carried out on relaxor ferroelectric Pb(Zn1/3Nb2/3)0.85Ti0.15O3 (PZN-PT) single crystal over the temperature range 300-585 K. The longitudinal acoustic phonon begins to soften below 650 K,…
Low-temperature (1.8 K) excitonic absorption, reflection and photoluminescence spectra of mixed $Zn(P_{1 - x}As_{x})_{2}$ crystals were studied at $x = $0.01, 0.02, 0.03 and 0.05. Energy gap and rydbergs of excitonic B, C and A-series…
We propose a scheme of an optical amplifier based on GaN and ZnO waveguides operating in the regime of strong coupling between photonic modes and excitonic resonances. Amplification of the guided exciton-polaritons is obtained by stimulated…
Electroluminescence properties of epitaxially grown n-ZnO/p-GaN pn-heterojunctions are investigated as functions of applied bias and temperature. The study reveals the existence of indirect interfacial excitons at sufficiently low…
XMM-Newton observations of seven QSOs are presented and the EPIC spectra analysed. Five of the AGN show evidence for Fe K-alpha emission, with three being slightly better fitted by lines of finite width; at the 99 per cent level they are…
Since the seminal observation of room-temperature laser emission from ZnO thin films and nanowires, numerous attempts have been carried out for detailed understanding of the lasing mechanism in ZnO. In spite of the extensive efforts…
Activation of shallow acceptor state has been observed in ion irradiated and subsequently air annealed polycrystalline ZnO material. Low temperature photoluminescence (PL) spectrum of the sample exhibits clear signature of acceptor bound…
We have studied the temperature dependencies of the photoluminescence (PL) intensity of 4.1 eV in microcrystalline powder of hexagonal boron nitride in the range of 7-1100 K. The results obtained have been analyzed within the band model of…
The dephasing time of the lowest bright exciton in CdSe/ZnS wurtzite quantum dots is measured from 5 K to 170 K and compared with density dynamics within the exciton fine structure using a sensitive three-beam four-wave-mixing technique…
Excitons play a key role for the optoelectronic properties of hybrid systems. We apply near-field scanning optical microscopy (NSOM) with a $100\,\text{-nm}$ spatial resolution to study the photoluminescence of surface excitons (SX) in a…