相关论文: Counting statistics in an InAs nanowire quantum do…

Due to the Fermi-Dirac statistics of electrons the temporal correlations of tunneling events in a double barrier setup are typically negative. Here, we investigate the shot noise behavior of a system of two capacitively coupled quantum dot…

We report a transport experiment on the Fano effect in a quantum connecting wire (QW) with a side-coupled quantum dot (QD). The Fano resonance occurs between the QD and the "T-shaped" junction in the wire, and the transport detects…

We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…

We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra…

We measure the shot noise of a quantum point-contact using a capacitively coupled InAs double quantum dot as an on-chip sensor. Our measurement signals are the (bidirectional) interdot electronic tunneling rates which are determined by…

Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate…

Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated…

There exists a fascinating dual representation of the electric ac current flowing through a normal conductor. On the one hand, it can be understood in terms of charge transport. On the other hand, it consists in an electomagnetic field…

In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (SET) and we observe a strong coupling between electrons and…

Spin-dependent transport through a two-level quantum dot in the sequential tunneling regime is analyzed theoretically by means of a real-time diagrammatic technique. It is shown that the current, tunnel magnetoresistance, and shot noise…

The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…

Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits,…

We study a two-level quantum dot embedded in a phonon bath and irradiated by a time-dependent ac field and develope a method that allows us to extract simultaneously the full counting statistics of the electronic tunneling and relaxation…

In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative…

We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling…

Studies of non-equilibrium current fluctuations enable assessing correlations involved in quantum transport through nanoscale conductors. They provide additional information to the mean current on charge statistics and the presence of…

We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…

We measure transport at finite bias through a double quantum dot formed by top-gates in an InAs nanowire. Pauli spin-bockade is confirmed with several electrons in the dot. This is expected due to the small exchange interactions in InAs and…

Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual…

We show experimentally that even when no bias voltage is applied to a quantum conductor, the electronic quantum partition noise can be investigated using GHz radiofrequency irradiation of a reservoir. Using a Quantum Point Contact…