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相关论文: Angle dependent conductance in graphene

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When a bilayer of graphene is placed in a suitably configured field effect device, an asymmetry gap can be generated and the carrier concentration made different in each layer. This provides a tunable semiconducting gap, and the valence and…

介观与纳米尺度物理 · 物理学 2009-11-13 E. J. Nicol , J. P. Carbotte

Electron transport in graphene under a laser-modulated barrier is studied in the presence of an energy gap, a scalar potential, and a uniaxial zigzag strain. The transfer-matrix approach is used with the boundary conditions to derive the…

介观与纳米尺度物理 · 物理学 2026-04-22 Hasna Chnafa , Clarence Cortes , David Laroze , Ahmed Jellal

We investigate electron tunneling in AB bilayer graphene through a triple electrostatic barrier of heights $U_i (i=2,3,4)$ subjected to a perpendicular magnetic field. By way of the transfer matrix method and using the continuity conditions…

介观与纳米尺度物理 · 物理学 2024-03-26 Mouhamadou Hassane Saley , Ahmed Jellal

Graphene nanostructures exhibit an intrinsic advantage in relation to the gate delay in three-terminal devices and provide additional benefits when operate in the quantum capacitance limit. In this paper, we developed a simple model that…

介观与纳米尺度物理 · 物理学 2011-08-02 George S. Kliros

We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized…

介观与纳米尺度物理 · 物理学 2009-03-10 F. Molitor , A. Jacobsen , C. Stampfer , J. Guettinger , T. Ihn , K. Ensslin

The electron transmission between monolayer and bilayer graphene is theoretically studied for zigzag and armchair boundaries within an effective-mass scheme. Due to the presence of an evanescent wave in the bilayer graphene, traveling modes…

介观与纳米尺度物理 · 物理学 2010-09-17 Takeshi Nakanishi , Mikito Koshino , Tsuneya Ando

The optical conductivity of graphene strained uniaxially is studied within the Kubo-Greenwood formalism. Focusing on inter-band absorption, we analyze and quantify the breakdown of universal transparency in the visible region of the…

介观与纳米尺度物理 · 物理学 2011-01-17 Vitor M. Pereira , R. M. Ribeiro , N. M. R. Peres , A. H. Castro Neto

We calculate theoretically the Coulomb drag resistivity for two graphene monolayers spatially separated by a distance "$d$". We show that the frictional drag induced by inter-layer electron-electron interaction goes asymptotically as…

介观与纳米尺度物理 · 物理学 2012-01-04 E. H. Hwang , S. Das Sarma

We have performed a theoretical study of electronic transport in single and bilayer graphene based on the standard linear-response (Kubo) formalism and continuum-model descriptions of the graphene band structure. We are focusing especially…

介观与纳米尺度物理 · 物理学 2010-02-25 J. Z. Bernad , U. Zuelicke , K. Ziegler

Two different gauge potential methods are engaged to calculate explicitly the spin Hall conductivity in graphene. The graphene Hamiltonian with spin-orbit interaction is expressed in terms of kinematic momenta by introducing a gauge…

数学物理 · 物理学 2015-03-17 O. F. Dayi , E. Yunt

The presence of twist angles between layers of two-dimensional materials has a profound impact on their physical properties. Turbostratic multilayer graphene is a system containing a distribution of rotational stacking faults, and these…

介观与纳米尺度物理 · 物理学 2022-10-05 A. Mohapatra , M. S. Ramachandra Rao , M. Jaiswal

Photon-assisted charge transport through a double barrier laser structure, separated by a region assisted by a magnetic field, is studied. Employing Floquet theory and matrix formalism, the transmission probabilities for the central band…

介观与纳米尺度物理 · 物理学 2024-10-18 Rachid El Aitouni , Miloud Mekkaoui , Abdelhadi Bahaoui , Ahmed Jellal

The quantum capacitance of the monolayer graphene for arbitrary carrier density, magnetic field and temperature is found. The density dependence of the quantum capacitance is analyzed for magnetic field(temperature) is fixed(varied) and…

介观与纳米尺度物理 · 物理学 2023-11-21 M. V. Cheremisin

We employ dual-gated 30{\deg}-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a…

介观与纳米尺度物理 · 物理学 2022-01-12 Giulia Piccinini , Vaidotas Mišeikis , Kenji Watanabe , Takashi Taniguchi , Camilla Coletti , Sergio Pezzini

We draw motivation from recent experimental studies and present a comprehensive study of magnetothermoelectric transport in a graphene monolayer within the linear response regime. We employ the modified Kubo formalism developed for thermal…

介观与纳米尺度物理 · 物理学 2015-05-27 R. Nasir , K. Sabeeh

We find experimentally that the optical sheet conductance of graphite per graphene layer is very close to $(\pi/2)e^2/h$, which is the theoretically expected value of dynamical conductance of isolated monolayer graphene. Our calculations…

强关联电子 · 物理学 2009-11-13 A. B. Kuzmenko , E. van Heumen , F. Carbone , D. van der Marel

Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based…

介观与纳米尺度物理 · 物理学 2020-04-01 Farhana Anwar , Andrii Iurov , Danhong Huang , Godfrey Gumbs , Ashwani Sharma

We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the…

介观与纳米尺度物理 · 物理学 2014-05-28 Juan Sebastian Ardenghi , Pablo Bechthold , Estela Gonzalez , Paula Jasen , Alfredo Juan

We theoretically investigate a folded bilayer graphene structure as an experimentally realizable platform to produce the one-dimensional topological zero-line modes. We demonstrate that the folded bilayer graphene under an external gate…

介观与纳米尺度物理 · 物理学 2018-12-26 Tao Hou , Guanghui Chen , Wang-Kong Tse , Changgan Zeng , Zhenhua Qiao

We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The…