相关论文: Electric-field-driven phase transition in vanadium…
We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric…
We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to…
The reversible metal-insulator transition in VO$_2$ at $T_\text{C} \approx 340$ K has been closely scrutinized yet its thermodynamic origin remains ambiguous. We discuss the origin of the transition entropy by calculating the electron and…
The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…
We study steady-states of semiconductor nanowires subjected to strong resonant time-periodic drives. The steady-states arise from the balance between electron-phonon scattering, electron-hole recombination via photo-emission, and Auger…
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…
Vanadium oxide (VOx) is a material of significant interest due to its metal-insulator transition (MIT) properties as well as its diverse stable antiferromagnetism depending on the valence states of V and O with distinct MIT transitions and…
We report the observation of a metal insulator transition at B=0 in a high mobility two dimensional hole gas in a GaAs-AlGaAs heterostructure. A clear critical point separates the insulating phase from the metallic phase, demonstrating the…
Current-voltage characteristics in the insulator bordering superconductivity in disordered thin films exhibit current jumps of several orders of magnitude due to the development of a thermally bistable electronic state at very low…
Metal-insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with…
In this paper we discuss the role of material parameters and external field effects on a thin film topological insulator(TI) in the context of quantum phase transition(QPT). First, we consider an in-plane tilted magnetic field and determine…
Despite widespread interest in the phase-change applications of vanadium dioxide (VO$_2$), the fabrication of high-quality VO$_2$ thin films with elevated transition temperatures (TIMT) and high Insulator-Metal-Transition resistance…
We study the photo-induced metallization process in niobium dioxide NbO$_2$. This compound undergoes the thermal insulator-to-metal transition at the remarkably high temperature of 1080 K. Our optical pump - terahertz probe measurements…
We performed a computational analysis on percolation transport and filament formation in amorphous $Ge_2Sb_2Te_5$ (a-GST) using 2D finite-element multi-physics simulations with 2 nm out-of-plane depth using an electric-field and temperature…
Charge doping is an effective way to induce metal-insulate transition (MIT) in correlated materials for many important utilizations, which is however practically limited by problem of low stability. In this study, we have achieved…
Field-induced superconductivity is a rare phenomenon where an applied magnetic field enhances or induces superconductivity. This fascinating effect arises from a complex interplay between magnetism and superconductivity, and it offers the…
We investigate optical forces on oscillating dipoles close to a phase-change vanadium dioxide (VO$_2$) film, which exhibits a metal-insulator transition around $340$ K and low thermal hysteresis. This configuration is related to one…
The metal insulator transition (MIT) in VO2 has been an important topic for recent years. It has been generally agreed that the mechanism of the MIT in bulk VO2 is considered to be a collaborative Mott-Peierls transition, however the effect…
A colossal electroresistance effect is observed around room temperature in a transition metal oxide LuFe2O4. The measurements of resistance under various applied voltages as well as the highly nonlinear current-voltage characteristics…
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…