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相关论文: Raman signatures of pressure induced electronic to…

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In recent years, a low pressure transition around P $\sim$ 3 GPa exhibited by the A$_2$B$_3$-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory…

材料科学 · 物理学 2016-03-23 Achintya Bera , Koushik Pal , D V S Muthu , U V Waghmare , A K Sood

The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in…

Pressure induced electronic topological transitions in the wide band gap semiconductor Sb2S3 (Eg = 1.7-1.8 eV) with similar crystal symmetry (SG: Pnma) to its illustrious analog, Sb2Se3, has been studied using Raman spectroscopy,…

Raman spectra of the MgB2 ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at ~590 cm-1 related to the E2g phonon mode. The frequency of…

材料科学 · 物理学 2009-11-07 K. P. Meletov , J. Arvanitidis , M. P. Kulakov , N. N. Kolesnikov , G. A. Kourouklis

This study explores the pressure evolution of the double perovskite Ba$_2$NiTeO$_6$ by employing experimental and computational techniques. For the study of structural and vibrational properties, synchrotron X-ray diffraction (XRD) and…

We investigate the nonequilibrium photocarrier dynamics of WTe2 under pressure using the optical pump-probe spectroscopy. The pressure dependences of the electronic relaxation manifest anomalous changes around 0.8, 3.5, and 6 GPa,…

强关联电子 · 物理学 2023-03-10 Kai Zhang , Fuhai Su , Dayong Liu , Wenjun Wang , Yongsheng Zhang , Zhi Zeng , Zhe Qu , Alexander F. Goncharov

One approach to discovering topological superconductor is establishing superconductivity based on well-identified topological insulators. However, the coexistence of superconductivity and topological state is always arcane. In this paper,…

超导电性 · 物理学 2022-09-30 Lei Kang , Zi-Yu Cao , Bo Wang

We performed X-ray diffraction and electrical resistivity measurement up to pressures of 5 GPa and the first-principles calculations utilizing experimental structural parameters to investigate the pressure-induced topological phase…

We report high pressure Raman experiments of Black phosphorus up to 24 GPa. The line widths of first order Raman modes A$^1_g$, B$_{2g}$ and A$^2_g$ of the orthorhombic phase show a minimum at 1.1 GPa. Our first-principles density…

We report the structural, vibrational and electrical transport properties up to 16 GPa of the 1T-TiTe2, a prominent layered 2D system, which is predicted to show a series of topologically trivial - nontrivial transitions under hydrostatic…

Topological insulators are non-trivial quantum states of matter which exhibit a gap in the electronic structure of their bulk form, but a gapless metallic electronic spectrum at the surface. Here, we predict a uniaxial strain induced…

材料科学 · 物理学 2015-06-22 Koushik Pal , Umesh V. Waghmare

Pressure-induced changes in the Fermi surface of Cd up to 40 GPa are studied using highly accurate density-functional theory calculations. The topology of Fermi surface changes at pressures of 2, 8, 12 , 18 and 28 GPa indicating electronic…

材料科学 · 物理学 2015-11-09 Varadharajan Srinivasan , B. K. Godwal , Jeffrey C. Grossman , Raymond Jeanloz

High pressure Raman spectroscopy of bulk 2H-MoTe$_2$ upto $\sim$ 29 GPa is shown to reveal two phase transitions (at $\sim$ 6 and 16.5 GPa), which are analyzed using first-principles density functional theoretical calculations. The…

材料科学 · 物理学 2017-03-08 Achintya Bera , Anjali Singh , D V S Muthu , U V Waghmare , A K Sood

Detailed high pressure Resonance Raman ($RR$) Spectroscopy and X-ray diffraction ($XRD$) studies are carried out on 3-4 layered $MoSe_2$ obtained by liquid exfoliation. Analysis of ambient $XRD$ pattern and $RR$ spectra indicate the…

材料科学 · 物理学 2019-08-29 Pinku Saha , Bishnupada Ghosh , Aritra Mazumder , Goutam Dev Mukherjee

A detailed high pressure investigation is carried out on $Fe_4Nb_2O_9$ using angle resolved x-ray diffraction and Raman spectroscopy measurements. We find a structural transition from the ambient trigonal phase to a monoclinic phase above…

材料科学 · 物理学 2022-03-01 Mrinmay Sahu , Bishnupada Ghosh , Rajesh Jana , Jinguang Cheng , Goutam Dev Mukherjee

High pressure x-ray diffraction up to 30 GPa and resonant emission x-ray spectroscopy and partial fluorescence yield x-ray absorption spectroscopy up to 52 GPa were used to study how the structural and electronic properties of UTe$_2$…

BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and…

A nanometric Sb2Te3 rhombohedral phase was produced from Sb and Te by mechanical alloying for 3 hours and its structural stability was studied by synchrotron X-ray diffraction (XRD) and Raman spectroscopy (RS) measurements as a function of…

We have carried out a detailed high-pressure investigation on the strongly correlated transition metal chalcogenide $Cr_{3}Te_4$ using Raman spectroscopy and XRD, which is ferromagnetic and metallic at ambient conditions. We find that the…

We report crystal growth and Raman spectroscopy characterization of pure and mixed bulk topological insulators. The series comprises of both binary and ternary tetradymite topological insulators. We analyzed in detail the Raman peaks of…

材料科学 · 物理学 2020-12-02 Deepak Sharma , M. M. Sharma , R. S. Meena , V. P. S. Awana
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