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When electron-electron interaction dominates over other electronic energy scales, exotic, collective phenomena often emerge out of seemingly ordinary matter. The strongly correlated phenomena, such as quantum spin liquid and unconventional…

The density functional theory for superconductors developed in the preceding article [cond-mat/0408685] is applied to the calculation of superconducting properties of several elemental metals. In particular, we present results for the…

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

In this study, we investigate the metal-insulator transition of charge transfer type in high-temperature cuprates. We first show that we must introduce a new band parameter in the three-band d-p model to reproduce the Fermi surface of high…

强关联电子 · 物理学 2014-08-05 Takashi Yanagisawa , Mitake Miyazaki

High temperature copper-oxide-based superconductivity is obtained by adding carriers to insulating "parent compounds". It is widely believed the parent compounds are "Mott" insulators, in which the lack of conduction arises from anomalously…

强关联电子 · 物理学 2008-04-07 A. Comanac , L de Medici , M. Capone , A. J. Millis

We solve by Dynamical Mean Field Theory a toy-model which has a phase diagram strikingly similar to that of high $T_c$ superconductors: a bell-shaped superconducting region adjacent the Mott insulator and a normal phase that evolves from a…

超导电性 · 物理学 2008-03-24 Marco Schiro' , Massimo Capone , Michele Fabrizio , Claudio Castellani

In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is…

强关联电子 · 物理学 2007-05-23 Leonid Didukh , Vasyl Hankevych

The realization of bulk metallic altermagnetism has remained elusive despite the growing number of candidate materials. Here, we present evidence that moderate cobalt substitution ($\sim$15%) drives the correlated narrow-gap semiconductor…

On the basis of the recently proposed self-consistent theory of metal- insulator transition in strongly disordered systems, taking into account interaction effects, we study transition temperature $T_{c}$ suppression in disordered…

超导电性 · 物理学 2009-10-28 E. Z. Kuchinskii , M. V. Sadovskii , M. A. Erkabaev

As a prototypical one-dimensional electron system, self-assembled indium (In) nanowires on the Si(111) surface have been believed to drive a metal-insulator transition by a charge-density-wave (CDW) formation due to electron-phonon…

介观与纳米尺度物理 · 物理学 2016-06-29 Sun-Woo Kim , Jun-Hyung Cho

Whether the newly discovered KxFe2-ySe2 systems are doped Mott or band insulators is key to how superconductivity emerges at lower temperature. With extant theoretical studies supporting conflicting scenarios, a more realistic approach is…

超导电性 · 物理学 2015-05-30 L. Craco , M. S. Laad , S. Leoni

We suggest here that the recently-reported ``insulator-metal transition'' in Si MOSFET's is consistent instead with a transition from an insulator to a T=0 p-wave superconducting state.

强关联电子 · 物理学 2008-02-03 P. Phillips , Y. Wan

Although evidence of inter-valley attraction-mediated by phonon or topological fluctuations is accumulating, the origin of superconductivity in the flat-band quantum moir\'e materials remains an open question. Here, instead of attempting to…

超导电性 · 物理学 2022-12-01 Xu Zhang , Kai Sun , Heqiu Li , Gaopei Pan , Zi Yang Meng

We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…

强关联电子 · 物理学 2012-10-15 Andrew C. Potter , Maissam Barkeshli , John McGreevy , T. Senthil

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

强关联电子 · 物理学 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze

Anomalous metal-insulator transition observed in filled skutterudite CeOs$_4$Sb$_{12}$ is investigated by constructing the effective tight-binding model with the Coulomb repulsion between f electrons. By using the mean field approximation,…

强关联电子 · 物理学 2009-11-11 Yoshiki Imai , Keitaro Sakurazawa , Tetsuro Saso

Superconductivity emerges from the cuprate antiferromagnetic Mott state with hole doping. The resulting electronic structure is not understood, although changes in the state of oxygen atoms appear paramount. Hole doping first destroys the…

超导电性 · 物理学 2012-05-24 Y. Kohsaka , T. Hanaguri , M. Azuma , M. Takano , J. C. Davis , H. Takagi

We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…

强关联电子 · 物理学 2018-08-30 Caterina De Franco , Luca F. Tocchio , Federico Becca

Superconductivity in underdoped cuprates emerges from an unusual electronic state characterised by nodal quasiparticles and an antinodal pseudogap. The relation between this state and superconductivity is intensely studied but remains…

The high-temperature superconductivity in copper oxides emerges when carriers are doped into the parent Mott insulator. This well-established fact has, however, eluded a microscopic explanation. Here we show that the missing link is the…

强关联电子 · 物理学 2018-11-14 Shiro Sakai , Marcello Civelli , Masatoshi Imada