相关论文: Using Capacitance Methods for Interface Trap Level…
We have developed a unique micromechanical method to extract extremely thin graphite samples. Graphite crystallites with thicknesses ranging from 10 - 100 nm and lateral size $\sim$ 2 $\mu$m are extracted from bulk. Mesoscopic graphite…
We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and…
We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity…
The electrical characterisation of graphene, either in plane sheets or in properly geometrised form can be approached using non-contact methods already employed for thin film materials. The extraordinary thinness (and, correspondingly, the…
A wireless vapor sensor based upon the quantum capacitance effect in graphene is demonstrated. The sensor consists of a metal-oxide-graphene variable capacitor (varactor) coupled to an inductor, creating a resonant oscillator circuit. The…
We have studied two interchange layer systems, (i) free standing partly hydrogenated graphene (graphone), and (ii) graphone on the Nickel (111) surface, to assess various density functional theory based computational schemes incorporating…
In a recent paper, we have used the dark-spot Zeeman tuned slowing technique [Phys. Rev. A 62, 013404-1, (2000)] to measure the capture velocity as a function of laser intensity for a sodium magneto optical trap. Due to technical limitation…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
Local electrical imaging using microwave impedance microscope is performed on graphene in different modalities, yielding a rich hierarchy of the local conductivity. The low-conductivity graphite oxide and its derivatives show significant…
The generalized tight-binding model, with the exact diagonalization method, is developed to investigate optical properties of graphene in five kinds of external fields. The quite large Hamiltonian matrix is transferred into the band-like…
In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…
We present electrical transport measurements of a van-der-Waals heterostructure consisting of a graphene nanoribbon separated by a thin boron nitride layer from a micron-sized graphene sheet. The interplay between the two layers is…
Graphene's high mobility and Fermi velocity, combined with its constant light absorption in the visible to far-infrared range, make it an ideal material to fabricate high-speed and ultra-broadband photodetectors. However, the precise…
The infrared (IR) photoresponse of graphene synthesized by an atmospheric chemical vapor deposition (CVD) system using a mixture of hydrogen and methane gases was studied. The IR sensor devices were fabricated using graphene films…
The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct…
Fabrication of devices made by isolated Graphene or Graphene-like single layers (such as h-BN) has opened up possibility of examining highly correlated states of electron systems in parts of their phase diagram that is impossible to access…
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not…
The electronic and transport properties of aluminum-graphene composite materials were investigated using ab initio plane wave density functional theory. The interfacial structure is reported for several configurations. In some cases, the…
Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show…
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…