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相关论文: Transport through graphene on SrTiO3

200 篇论文

The two-dimensional electron system formed at the interface between the insulating oxides LaAlO3 and SrTiO3 exhibits ferromagnetism, superconductivity, and a wide range of unique magnetotransport properties. A key challenge is to find a…

强关联电子 · 物理学 2012-11-13 Arjun Joshua , S. Pecker , J. Ruhman , E. Altman , S. Ilani

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and…

介观与纳米尺度物理 · 物理学 2012-05-24 S. Minke , S. H. Jhang , J. Wurm , Y. Skourski , J. Wosnitza , C. Strunk , D. Weiss , K. Richter , J. Eroms

Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport…

介观与纳米尺度物理 · 物理学 2015-06-17 Jens Baringhaus , Frederik Edler , Christoph Neumann , Christoph Stampfer , Stiven Forti , Ulrich Starke , Christoph Tegenkamp

Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed…

介观与纳米尺度物理 · 物理学 2020-08-24 Sergio Pezzini , Vaidotas Mišeikis , Simona Pace , Francesco Rossella , Kenji Watanabe , Takashi Taniguchi , Camilla Coletti

We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…

介观与纳米尺度物理 · 物理学 2009-11-13 Seyoung Kim , Junghyo Nah , Insun Jo , Davood Shahrjerdi , Luigi Colombo , Zhen Yao , Emanuel Tutuc , Sanjay K. Banerjee

High-quality, large-area epitaxial graphene can be grown on metal surfaces but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by…

We consider the effect of uniaxial strain on ballistic transport in graphene, across single and multiple tunneling barriers. Specifically, we show that applied strain not only shifts the position of the Dirac points in reciprocal space, but…

介观与纳米尺度物理 · 物理学 2011-11-04 F. M. D. Pellegrino , G. G. N. Angilella , R. Pucci

The interplay between distinct carrier species in systems with broken Galilean invariance gives rise to a rich landscape of interaction-driven transport phenomena. Here, we develop a comprehensive theory for the electrical conductivity of a…

介观与纳米尺度物理 · 物理学 2026-04-10 Yuping Huang , O. V. Kibis , V. M. Kovalev , I. G. Savenko

We provide a theoretical model that describes the dielectric coupling of a 2D layer of graphene, represented by a polarization function in the Random Phase Approximation, and a semi-infinite 3D substrate, represented by a surface response…

介观与纳米尺度物理 · 物理学 2010-06-10 K. F. Allison , Z. L. Miskovic

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a…

We present evidence of a drastic renormalization of the optical conductivity of graphene on SrTiO$_3$ resulting in almost full transparency in the ultraviolet region. These findings are attributed to resonant excitonic effects further…

We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk…

材料科学 · 物理学 2009-07-15 Vitor M. Pereira , A. H. Castro Neto , N. M. R. Peres

The graphene is a native two-dimensional crystal material consisting of a single sheet of carbon atoms. In this unique one-atom-thick material, the electron transport is ballistic and is described by a quantum relativistic-like Dirac…

量子物理 · 物理学 2007-05-23 Daniela Dragoman , Mircea Dragoman

Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered Sn $(1\times1)$ structure on the SiC surface with quasi-freestanding graphene on top. While the electronic properties of the individual layers have been…

We have investigated the behavior of the resistance of graphene at the $n=0$ Landau Level in an intense magnetic field $H$. Employing a low-dissipation technique (with power $P<$3 fW), we find that, at low temperature $T$, the resistance at…

介观与纳米尺度物理 · 物理学 2009-04-01 Joseph G. Checkelsky , Lu Li , N. P. Ong

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…

介观与纳米尺度物理 · 物理学 2016-07-13 J. T. Ye , M. F. Craciun , M. Koshino , S. Russo , S. Inoue , H. T. Yuan , H. Shimotani , A. F. Morpurgo , Y. Iwasa

We study the effects of polarizable substrates such as SiO2 and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening due to the long-range interaction with the polar modes at the…

介观与纳米尺度物理 · 物理学 2009-11-13 S. Fratini , F. Guinea

We calculate dc-conductivities of ballistic graphene undulated by a overlying moving unidirectional electrical superlattice (SL) potential whose SL-velocity is smaller than the electron velocity. We obtain no dependence of the conductivity…

介观与纳米尺度物理 · 物理学 2013-05-30 Jürgen Dietel , Hagen Kleinert

The electronic transport properties of a series of LaAlO_3 / SrTiO_3 interfaces were investigated, and a systematic thickness dependence of the sheet resistance and magnetoresistance was found for constant growth conditions. This trend…

强关联电子 · 物理学 2015-05-13 C. Bell , S. Harashima , Y. Hikita , H. Y. Hwang