相关论文: High efficiency switching using graphene based ele…
The observation of quantum conductance oscillations in mesoscopic systems has traditionally required the confinement of the carriers to a phase space of reduced dimensionality. While electron optics such as lensing and focusing have been…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
Exercising direct control over the unusual electronic structures arising from quantum confinement effects in graphene nanoribbons (GNRs) - atomically defined quasi one-dimensional (1D) strips of graphene - is intimately linked to geometric…
We theoretically investigate the electron tunneling in dual-gated bilayer graphene-based $n/p$ junctions. It is shown that a band gap is introduced by tuning the gate voltage, which modifies the pseudospin polarization and breaks anti-Klein…
We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ…
We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene.…
Transient optical heating provides an efficient way to trigger phase transitions in naturally occurring media through ultrashort laser pulse irradiation. A similar approach could be used to induce topological phase transitions in the…
Step junctions are often present in layered materials, i.e. where single-layer regions meet multi-layer regions, yet their effect on thermal transport is not understood to date. Here, we measure heat flow across graphene junctions (GJs)…
We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…
There has been a rapidly growing interest in optoelectronic properties of graphene and associated structures. Despite the general belief on absence of spontaneous emission in graphene, which is normally attributed to its unique ultrafast…
An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…
Feedback-controlled electric breakdown of graphene in air or vacuum is a well-established way of fabricating tunnel junctions, nanogaps, and quantum dots. We show that the method is equally applicable to encapsulated graphene constrictions…
It has been indicated that the path forward for the widespread usage of ferroelectric (FE) materials may be considerably facilitated through the reduction of programming voltages to on-chip logic compatible values of < 1 V. Obstacles…
Graphene is a unique platform for tunable opto-electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light-matter interactions. Tuning the nonlinear optical response of graphene is…
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered…
Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…
The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has…
The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge…