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In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require…

介观与纳米尺度物理 · 物理学 2015-05-14 Martina Cheli , Paolo Michetti , Giuseppe Iannaccone

Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging…

Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance…

介观与纳米尺度物理 · 物理学 2013-02-06 Guang-Xin Ni , Yi Zheng , Sukang Bae , Chin Yaw Tan , Orhan Kahya , Jing Wu , Byung Hee Hong , Kui Yao , Barbaros Özyilmaz

Multi-layer graphene on the carbon face of silicon carbide is an intriguing electronic system which typically consists of a stack of ten or more layers. Rotational stacking faults in this system dramatically reduce inter-layer coherence. In…

介观与纳米尺度物理 · 物理学 2010-09-01 Rosario E. V. Profumo , Marco Polini , Reza Asgari , Rosario Fazio , A. H. MacDonald

We analyze the features of the graphene mono- and multilayer reflectance in the far-infrared region as a function of frequency, temperature, and carrier density taking the intraband conductance and the interband electron absorbtion into…

软凝聚态物质 · 物理学 2009-11-13 L. A. Falkovsky

We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k top-gate on the epitaxial…

介观与纳米尺度物理 · 物理学 2015-06-03 Tian Shen , Adam T. Neal , Michael L. Bolen , Jiangjiang Gu , Lloyd W. Engel , Michael A. Capano , Peide Ye

We analyze the magneto-optical conductivity (and related magnitudes like transmittance and Faraday rotation of the irradiated polarized light) of some elemental two-dimensional Dirac materials of group IV (graphene analogues, buckled…

介观与纳米尺度物理 · 物理学 2024-03-20 M. Calixto , A. Mayorgas , N. A. Cordero , E. Romera , O. Castaños

Graphene is a 2D material with appealing electronic and optoelectronic properties. It is a zero-bandgap material with valence and conduction bands meeting in a single point (Dirac point) in the momentum space. Its conductivity can be…

应用物理 · 物理学 2020-03-10 V. Sorianello , G. Contestabile , M. Romagnoli

We report measurements of the cyclotron mass in graphene for carrier concentrations n varying over three orders of magnitude. In contrast to the single-particle picture, the real spectrum of graphene is profoundly nonlinear so that the…

We employ ultrabroadband terahertz (THz) spectroscopy to expose the high-frequency transport properties of Dirac fermions in monolayer graphene. By controlling the carrier concentration via tunable electrical gating, both equilibrium and…

介观与纳米尺度物理 · 物理学 2024-10-29 G. Coslovich , R. P. Smith , S. -F. Shi , J. H. Buss , J. T. Robinson , F. Wang , R. A. Kaindl

The magneto-optical absorption properties of graphene multilayers are theoretically studied. It is shown that the spectrum can be decomposed into sub-components effectively identical to the monolayer or bilayer graphene, allowing us to…

介观与纳米尺度物理 · 物理学 2009-11-13 Mikito Koshino , Tsuneya Ando

We show the successful intercalation of large area (1 cm$^2$) epitaxial few-layer graphene grown on 4H-SiC with FeCl$_3$. Upon intercalation the resistivity of this system drops from an average value of $\approx 200 \ \Omega/sq$ to $\approx…

介观与纳米尺度物理 · 物理学 2015-06-17 T. H. Bointon , I. Khrapach , R. Yakimova , A. V. Shytov , M. F. Craciun , S. Russo

Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moir\'e patterns of…

We study electromagnetic properties of a double layer graphene system in which electrons from one layer are coupled with holes from the other layer. The gauge invariant linear response functions are obtained. The frequency dependences of…

介观与纳米尺度物理 · 物理学 2016-06-01 K. V. Germash , D. V. Fil

We study the influence of different kinds of gaps in a quasiparticle spectrum on longitudinal and transverse optical conductivities of bilayer graphene. An exact analytical expression for magneto-optical conductivity is derived using a…

强关联电子 · 物理学 2012-08-08 E. V. Gorbar , V. P. Gusynin , A. B. Kuzmenko , S. G. Sharapov

Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be…

The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct…

材料科学 · 物理学 2009-12-25 Fengnian Xia , Thomas Mueller , Yu-ming Lin , Alberto Valdes-Garcia , Phaedon Avouris

We study the infrared cyclotron resonance of high mobility monolayer graphene encapsulated in hexagonal boron nitride, and simultaneously observe several narrow resonance lines due to interband Landau level transitions. By holding the…

介观与纳米尺度物理 · 物理学 2018-01-30 B. Jordan Russell , Boyi Zhou , T. Taniguchi , K. Watanabe , Erik A. Henriksen

In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 \mu\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance…

介观与纳米尺度物理 · 物理学 2012-07-13 E. Pallecchi , M. Ridene , D. Kazazis , C. Mathieu , F. Schopfer , W. Poirier , D. Mailly , A. Ouerghi

In graphene on transition metal dichalcogenides, proximity-induced Rashba and spin-valley Zeeman SOCs can coexist that modify graphene's electronic band differently. Here, we show that the Landau levels (LLs) are also affected by these SOCs…

介观与纳米尺度物理 · 物理学 2024-01-09 Qing Rao , Hongxia Xue , Dong-Keun Ki