相关论文: Metallic Behavior of Cyclotron Relaxation Time in …

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…

The temperature and density dependence of the phase coherence time $\tau_\phi$ in high-mobility silicon inversion layers was determined from the magnetoresistivity due to weak localization. The upper temperature limit for single-electron…

We have measured the low-field magnetoresistances (MRs) of a series of Sn-doped indium oxide thick films in the temperature $T$ range 4--35 K. The electron dephasing rate $1/\tau_{\varphi}$ as a function of $T$ for each film was extracted…

We present high energy x-ray (67 keV) and neutron scattering measurements on a single crystal of K$_{1-x}$Li$_x$TaO$_3$ for which the Li content ($x=0.02$) is less than $x_c = 0.022$, the critical value below which no structural phase…

Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…

We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from…

The compound $Nb_{5-\delta}Te_4$ ($\delta=0.23$) with quasi-one-dimensional crystal structure undergoes a transition to superconductivity at $T_c$=0.6--0.9 K. Its electronic transport properties in the normal state are studied in the…

Recent THz spectroscopy of the quantum paraelectric SrTiO$_3$ (arXiv:2501.15771) and a high-$T_c$ cuprate (arXiv:2503.15646) has renewed interest in energy relaxation in correlated electron systems. We consider a situation in which…

In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic…

We have performed nuclear quadrupole resonance (NQR) experiments on $^{47}$Ti nuclei in Dy$_2$Ti$_2$O$_7$ in the temperature range 70 -- 300 K in order to investigate the dynamics of $4f$ electrons with strong Ising anisotropy. A…

By studying the temperature-dependent behavior of electron thermal conductivity (k) in a 3.2 nm-thin film, we quantify the extremely confined defect-electron scattering and reveal the intrinsic phonon-electron scattering that is shared by…

The relaxations of conductivity have been studied in a strongly disordered two-dimensional (2D) electron system in Si after excitation far from equilibrium by a rapid change of carrier density n_s at low temperatures T. The dramatic and…

The quadratic low-temperature dependence of resistance in ordinary metals is determined by the momentum relaxation due to electron-electron scattering in the presence Umklapp processes and scattering on impurities. In metals without…

$^{19}$F NMR measurements in SmFeAsO$_{1-x}$F$_x$, for $0.15\leq x\leq 0.2$, are presented. The nuclear spin-lattice relaxation rate $1/T_1$ increases upon cooling with a trend analogous to the one already observed in…

The temperature dependence of conductivity $\sigma (T)$ in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by…

The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…

Effects of resonant acoustic phonon scattering on magnetoresistivity are examined in two-dimensional electron systems at low temperatures by using a balance-equation magnetotransport scheme direct controlled by the current. The…

The negatively charged boron vacancy in two-dimensional hexagonal boron nitride has emerged as a promising candidate for quantum sensing. The coherence time of this defect spins which coherent quantum sensing resides in is limited…

The temperature evolution of spin relaxation time, {\tau}sf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. {\tau}sf at 300 K is estimated to be 1.68+-0.03 ns and…

The electron spin-lattice relaxation (SLR) times T1 of Yb3+‡ ions were measured from the temperature dependence of electron spin resonance linewidth in Y0.99Yb0.01Ba2Cu3Ox with different oxygen contents. Raman relaxation processes…