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相关论文: Proximity effect at superconducting Sn-Bi2Se3 inte…

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Superconducting proximity effect (SPE) in topological insulator (TI) and superconductor (SC) hybrid structure has attracted intense attention in recent years in an effort to search for mysterious Majorana fermions (MFs) in condensed matter…

We have studied the electron transport properties of topological insulator-related material Bi2Se3 near the superconducting Pb-Bi2Se3 interface, and found that a superconducting state is induced over an extended volume in Bi2Se3. This state…

超导电性 · 物理学 2012-06-28 Fan Yang , Fanming Qu , Jie Shen , Yue Ding , Jun Chen , Zhongqing Ji , Guangtong Liu , Jie Fan , Changli Yang , Liang Fu , Li Lu

Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbSe2 single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40…

Measurements of conductance spectra in a superconductor - topological insulator - normal metal thin film junctions of NbN-$\rm Bi_2Se_3$-Au are reported. Junctions with ex-situ and in-situ prepared $\rm NbN-Bi_2Se_3$ interfaces were…

超导电性 · 物理学 2015-06-05 Gad Koren , Tal Kirzhner

The electric transport properties of superconducting FeSe0.3Te0.7/Au c-axis (S/N) junctions, fabricated by using Pulsed Laser Deposition technique, have been investigated in the temperature range of 2 K to the superconducting transition…

超导电性 · 物理学 2015-06-15 Y. T. Shen , Y. S. Li , K. C. Lin , M. K. Wu , C. C. Chi

Some topological insulators become superconducting when doped with Cu and Pd. Superconductivity in a non-superconductor may be induced by proximity effect: i.e. Contacting a non-superconductor with a superconductor. The superconducting…

超导电性 · 物理学 2015-12-31 P. Arevalo-López , R. E. López-Romero , R. Escudero

Interest in the superconducting proximity effect has been reinvigorated recently by novel optoelectronic applications as well as by the possible emergence of the elusive Majorana fermion at the interface between topological insulators and…

We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the…

介观与纳米尺度物理 · 物理学 2009-10-31 F. Lefloch , D. Quirion , M. Sanquer

We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance…

介观与纳米尺度物理 · 物理学 2007-05-23 D. Quirion , F. Lefloch , M. Sanquer

High-temperature superconductors exhibit a wide variety of novel excitations. If contacted with a topological insulator, the lifting of spin rotation symmetry in the surface states can lead to the emergence of unconventional…

We experimentally investigate Andreev transport through a single junction between an s-wave indium superconductor and a thick film of a three-dimensional $Bi_2Te_3$ topological insulator. We study $Bi_2Te_3$ samples with different bulk and…

介观与纳米尺度物理 · 物理学 2017-12-19 O. O. Shvetsov , V. A. Kostarev , A. Kononov , V. A. Golyashov , K. A. Kokh , O. E. Tereshchenko , E. V. Deviatov

We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface.…

In a search for a simple proximity system of a topological insulator and a superconductor for studying the role of surface versus bulk effects by gating, we report here on a first step toward this goal, namely the choice of such a system…

超导电性 · 物理学 2015-01-05 Gad Koren

Effects of impurity scatterings on the conductance in normal-metal / $d$ wave superconductor junctions are discussed by using the single-site approximation. So far, the split of the zero-bias conductance peak has been believed to be an…

超导电性 · 物理学 2007-05-23 Y. Yasano , Y. Tanaka , S. Kashiwaya

When certain elemental metals like Cu, Sr and Nb are intercalated between the layers of Bi$_2$Se$_3$, a topological insulator, the intercalated systems superconduct with critical temperatures around 3 K. Naturally, in all these cases, the…

超导电性 · 物理学 2018-10-03 Anshu Sirohi , Shekhar Das , Prakriti Neha , Karn S. Jat , Satyabrata Patnaik , Goutam Sheet

We report enhanced two-component superconductivity in (CoSi2/Si)/TiSi2 superconductor/normal-metal (S/N) heterojunctions. An enhanced superconducting transition temperature about twice that of CoSi2 and an upper critical field about 20…

超导电性 · 物理学 2022-02-21 Shao-Pin Chiu , Vivek Mishra , Yu Li , Fu-Chun Zhang , Stefan Kirchner , Juhn-Jong Lin

Thin film junctions and bilayers of the doped topological insulator $\rm Bi_2Se_3$ and the s-wave superconductor NbN were found to exhibit conductance spectra with prominent zero bias and coherence peaks. Various tunneling models with…

超导电性 · 物理学 2015-06-15 Gad Koren , Tal Kirzhner , Yoav Kalcheim , Oded Millo

Most quantum point contacts (QPCs) fabricated in high-mobility 2D electron gases show a zero-bias conductance peak near pinchoff, but the origin of this peak remains a mystery. Previous experiments have primarily focused on the zero-bias…

介观与纳米尺度物理 · 物理学 2015-05-19 Y. Ren , W. W. Yu , S. M. Frolov , J. A. Folk , W. Wegscheider

Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave…

超导电性 · 物理学 2014-08-21 T. Yilmaz , I. Pletikosic , A. P. Weber , J. T. Sadowski , G. D. Gu , A. N. Caruso , B. Sinkovic , T. Valla

We observe proximity-induced superconductivity in the \textit{in situ} prepared heterostructures constructed by topological insulator Bi$_{2}$Te$_{3}$ thin films and high-temperature cuprate superconductors…

超导电性 · 物理学 2020-07-01 Siyuan Wan , Qiangqiang Gu , Huazhou Li , Huan Yang , J. Schneeloch , R. D. Zhong , G. D. Gu , Hai-Hu Wen
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