相关论文: Conduction through 71o domain walls in BiFeO3 thin…

We present a model for the dynamics of current- and field-driven domain-wall lines at nonzero temperature. We compute thermally-averaged drift velocities from the Fokker-Planck equation that describes the nonzero-temperature dynamics of the…

We study spin textures in a quantum Hall Ising ferromagnet. Domain walls between ferro and unpolarized states at $\nu=2$ are analyzed with a functional theory supported by a microscopic calculation. In a neutral wall, Hartree repulsion…

Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution…

The thermal properties of solids under nanoscale confinement are currently not understood at the atomic level. Recent numerical studies have highlighted the presence of a minimum in the thermal conductivity as a function of thickness for…

We analyze the enhancement of the superconducting critical temperature of superconducting/ferromagnetic bilayers due to the appearance of localized superconducting states in the vicinity of magnetic domain walls in the ferromagnet. We…

Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by a plasma-enhanced atomic layer deposition method between two aluminum…

Quantum confinement in a thin-film geometry offers viable routes for tuning the critical properties of superconductors through modification of both density of states and pairing interaction. Low-density systems like doped strontium titanate…

We impose uniform electric fields both parallel and normal to 180^o ferroelectric domain walls in PbTiO_3 and obtain the equilibrium structures using the method of anharmonic lattice statics. In addition to Ti-centered and Pb-centered…

A Landau-Ginsburg-Devonshire-type nonlinear phenomenological theory is presented, which enables the thermodynamic description of dense laminar polydomain states in epitaxial ferroelectric thin films. The theory explicitly takes into account…

Perovskite ferroelectric oxides are usually considered to be brittle materials, however, recent work [Dong et al., Science 366, 475 (2019)] demonstrated the super-elasticity in the freestanding BaTiO3 thin films. This property may originate…

Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to…

The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000…

This work demonstrated two different kinds of magneto-transport behaviors in epitaxial $L1_{0}$ MnAl film as a function of temperature. The magneto-resistance ratio (MR) was negative and exhibited evident enhancement in the resistivity at…

Variable temperature scanning tunneling microscopy/spectroscopy studies on (110) oriented epitaxial thin films of La$_{0.350}$Pr$_{0.275}$Ca$_{0.375}$MnO$_3$ are reported in the temperature range of 77 to 340 K. The films, grown on lattice…

We report observation of 90-degree ferroelectric domain structures in transmission electron microscopy (TEM) of epitaxially-grown films of PbTiO3. Using molecular dynamics (MD) simulations based on first-principles effective Hamiltonian of…

We study electron transport through a domain wall in a ferromagnetic nanowire subject to spin-dependent scattering. A scattering matrix formalism is developed to address both coherent and incoherent transport properties. The coherent case…

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined…

Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is…

BaTiO$_3$ (BTO) is a prototypical perovskite ferroelectric, whose dielectric permittivity and loss spectra -- which are strongly temperature and frequency dependent -- include contributions from inhomogeneous polarization patterns, with…

Next-generation concepts for solid-state memory devices are based on current-driven domain wall propagation, where the wall velocity governs the device performance. It has been shown that the domain wall velocity and the direction of travel…