相关论文: Ambipolar bistable switching effect of graphene

A model for the rival mechanisms of hysteresis in graphene channel resistivity on a substrate of different nature dependence on a gate voltage - a direct one (caused by adsorbates with dipole moment on surface and interface) and an inverse…

We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range…

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…

Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modification of graphene such that its conductance changes by more…

Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability,…

We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…

Hysteretic gate responses of two-dimensional material heterostructures serve as sensitive probes of the underlying electronic states and hold significant promise for the development of novel nanoelectronic devices. Here we identify a new…

Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the…

We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on…

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the…

We analyse a model describing hysteretic behaviour of the reflectivity R for the system 'graphene-Pb(ZrxTi1-x)O3 (PZT) ferroelectric substrate-gate' with a gate voltage variation, which takes into account trapping of electrons into the…

We demonstrate a flip-chip device for performing low-temperature acoustoelectric measurements on exfoliated two-dimensional materials. With this device, we study gate-tunable acoustoelectric transport in an exfoliated monolayer graphene…

We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and…

We calculate the shift current response in twisted double bilayer graphenes (TDBG) by applying the perturbative approach to the effective continuum Hamiltonian. We have performed a systematic study of the shift current in AB-AB and AB-BA…

Graphene -a recently discovered one-atom-thick layer of graphite- constitutes a new model system in condensed matter physics, because it is the first material in which charge carriers behave as massless chiral relativistic particles. The…

Hysteresis exhibited by current-voltage characteristics during field-emission experiments is often considered undesirable in terms of practical applications. However, this is an appealing effect for the purposes of memristive devices. We…

The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and…

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…

A theoretical model is proposed to describe asymmetric gate-voltage dependence of conductance and noise in two-terminal ballistic graphene devices. The model is analyzed independently within the self-consistent Hartree and Thomas-Fermi…

We propose a general theory for the analytical description of versatile hysteretic phenomena in a graphene field effect transistor (GFET) allowing for the existence of the external dipoles on graphene free surface and the localized states…