相关论文: Multi-domain ferroelectricity as a limiting factor…
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS structure, opening a new route for the realization of…
The design of the interfacial bondings at metal-oxide interfaces yields exciting new phenomena and can be a route to sustain, and even promote, ferroelectricity at the nanoscale. We study the impact of these interfaces on the nature of the…
Ferroelectric field-effect doping has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a new class of field-effect devices. However, this potential is not fully exploited so far, since…
T.W. Noh and his group (Kim et al.: PRL, 2005) have recently published a seminal experimental study of very thin ferroelectric (FE) BaTiO3 capacitors. They found an evidence that all their samples, including the thinnest one (d=5 nm), are…
Ferroelectrics under suitable electric boundary conditions can present a negative capacitance response, whereby the total voltage drop across the ferroelectric opposes the externally applied bias. When the ferroelectric is in a…
In this paper we study the size effects of the ferroelectric nanotube phase diagrams and polar properties allowing for effective surface tension and depolarization field influence. The approximate analytical expression for the…
Ferroelectrics subject to suitable electric boundary conditions present a steady negative capacitance response. When the ferroelectric is in a heterostructure, this behavior yields a voltage amplification in the other elements, which…
We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…
Ferroelectrics usually adopt a multi-domain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric…
Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum…
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to…
Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…
Analytical modeling and dynamics of multidomain in metal-ferroelectric-insulator-semiconductor (MFIS)-FETs are presented in this paper. The formation of multi-domain (MD) leads to oscillations in the conduction band in the channel and…
We describe here a novel approach to the subject of thermoelectric devices. The current best thermoelectrics are based on heavily doped semiconductors or semimetal alloys. We show that utilization of electric field effect or ferroelectric…
We propose a concept for superconducting electric field-effect devices based on superconducting films sandwiched between ferroelectric layers. We provide theoretical calculations that indicate how the field effect in these devices could be…
We experimentally demonstrate a simple graphene/ ferrolectric device, termed Ferrotronic (electronic effect from ferroelectric) device in which the band-structure of single-layer graphene is modified. The device architecture consists of…
We investigate numerically the homogenized permittivities of composites made of low index dielectric inclusions in a ferroelectric matrix under a static electric field. A refined model is used to take into account the coupling between the…
Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional two-dimensional systems for the development of next-generation nanoelectronics. A major achievement in the field was…