相关论文: Bistable non-volatile elastic membrane memcapacito…
Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting…
The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…
A nematic liquid-crystal cell subject to an electric field created by electrodes held at constant potential is modeled as a variable capacitor in an RC circuit. The state of the system is characterized in terms of the director field in the…
Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…
This project explores the use of non-volatile synapses in neuromorphic computing for pattern recognition tasks through a comprehensive simulation-based approach. The main approach is through spintronic synapses, which leverage the…
Although coveted in applications, few materials expand when subject to compression or contract under decompression, i.e., exhibit the negative compressibility phenomenon. A key step to achieve such counterintuitive behaviour is the…
Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
The memristor is a device whose resistance changes depending on the polarity and magnitude of a voltage applied to the device's terminals. We design a minimalistic model of a regular network of memristors using structurally-dynamic cellular…
The generation of action potential brings into play specific mechanosensory stimuli manifest in the variation of membrane capacitance, resulting from the selective membrane permeability to ions exchanges and testifying to the central role…
Noninvasive brain stimulation can activate neurons in the brain but requires power electronics with exceptionally high power in the mega-volt-ampere and high frequencies in the kilohertz range. Whereas oscillator circuits offered only one…
A variational approach is employed to find stationary solutions to a free boundary problem modeling an idealized electrostatically actuated MEMS device made of an elastic plate coated with a thin dielectric film and suspended above a rigid…
A bistable micro-mechanical system based on magnetic repulsion is presented exploring its applicability as memory unit where the state of the bit is encoded in the rest position of a deflected cantilever. The non-linearity induced on the…
We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors…
Memristor device modeling is currently a heavily researched topic and is becoming ever more important as memristor devices make their way into CMOS circuit designs, necessitating accurate and efficient memristor circuit simulations. In this…
We propose the interaction of two quantum memristors via capacitive and inductive coupling in feasible superconducting circuit architectures. In this composed system the input gets correlated in time, which changes the dynamic response of…
In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…
Here it is proposed a three-dimensional plasmonic nonvolatile memory crossbar arrays that can ensure a dual-mode operation in electrical and optical domains. This can be realized through plasmonics that serves as a bridge between photonics…